摘要:
A surface acoustic wave device comprises an elastic substrate; a lower electrode provided on the elastic substrate; a piezo-electric film covering the lower electrode; and plural upper electrodes which each include plural electrode fingers and are aligned with and spaced from each other on the piezoelectric film in confrontation with the lower electrode.
摘要:
A surface acoustic wave device in which first electrodes are provided on a piezoelectric film deposited on an elastic substrate, second electrodes between the piezoelectric film and the elastic substrate, and third electrode within the piezoelectric film, respectively, so that an electric signal is applied to the first and second electrodes.
摘要:
A surface acoustic wave device includes a silicon substrate having a main surface with a given crystalline orientation, a zinc oxide layer deposited on the main surface of the silicon substrate and a dielectric layer as well as electrodes both formed in contact with said zinc oxide layer, so that a surface acoustic wave will be propagated along a given crystalline axis direction of the silicon substrate.
摘要:
A surface acoustic wave device comprises a lower electrode provided on an elastic substrate, a piezoelectric film covering the lower electrode and an upper electrode provided on the piezoelectric film. The device is characterized in that the upper electrode comprises first and second double electrodes both opposed to the lower electrode.
摘要:
A surface-acoustic-wave device wherein a plurality of metal strips (S) are provided on a propagation path of surface acoustic wave which is formed in a laminate comprised of a piezoelectric layer (23) and a semiconductor (1), the metal strips are extended onto the semiconductor outside the propagation path of surface acoustic wave, and depletion layer capacitance non-linearity created on the semiconductor surface at a region where the metal strips are extended is used as a main factor of a parametric interaction.
摘要:
A surface-acoustic-wave parametric device characterized in that a width of a parametric interaction region in a direction perpendicular to the propagation direction of surface acoustic wave is varied so as to correspond to a desired frequency characteristic.
摘要:
An elastic surface wave device having an input electrode, a pump electrode and an output electrode provided on a body of the device. The output electrode is juxtaposed with the input electrode on the body of the device on the same side with reference to the pump electrode and a multistrip coupler is provided between the pump electrode and the input and output electrodes so as to output, through the output electrode, a backward wave signal from the pump electrode.
摘要:
A frequency selector apparatus which effects a frequency selection by providing at least one reflecting electrode at a position adjacent elastic surface wave transducer or transducers provided in an acoustic wave propagation track in a piezoelectric medium so as to reflect a frequency component selected by a parametric interaction with an a.c. electrical signal applied to said reflecting electrode.
摘要:
A differential phase shift keying convolver having a plurality of tracks includes at least one track where an opposite phase convolution output is produced. Each track includes two output gates spaced at the center for differential phase shift keying demodulation. Among these output gates, some gates selected in accordance with the phase relationship between convolution outputs are connected to provide sum and/or difference outputs of the convolution signals. The opposite phase convolution outputs can be produced by arranging at least one of the input transducers in a step-like configuration, by using multistrip couplers, or by providing a metal film in a selected position of the traveling path of surface acoustic waves for application of a control voltage.
摘要:
Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.