公开(公告)号：US09454076B2

公开(公告)日：2016-09-27

申请号：US14385238

申请日：2012-05-18

申请人： Guoqiang Yang ,  Jian Xu ,  Li Chen ,  Shuangqing Wang ,  Shayu Li

发明人： Guoqiang Yang ,  Jian Xu ,  Li Chen ,  Shuangqing Wang ,  Shayu Li

IPC分类号： C07C43/205 ,  G03F7/004 ,  C07C69/96 ,  C07C39/16 ,  C07C39/17 ,  C07C43/21 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  C07C37/16 ,  C07C39/15 ,  C07C41/01 ,  C07C68/06

CPC分类号： G03F7/0045 ,  C07C37/16 ,  C07C39/15 ,  C07C39/16 ,  C07C39/17 ,  C07C41/01 ,  C07C43/205 ,  C07C43/2055 ,  C07C43/21 ,  C07C68/06 ,  C07C69/96 ,  C07C2603/92 ,  G03F7/0002 ,  G03F7/0382 ,  G03F7/0392

摘要： The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.

公开(公告)号：US20150037735A1

公开(公告)日：2015-02-05

申请号：US14385238

申请日：2012-05-18

申请人： Guoqiang Yang ,  Jian Xu ,  Li Chen ,  Shuangqing Wang ,  Shayu Li

发明人： Guoqiang Yang ,  Jian Xu ,  Li Chen ,  Shuangqing Wang ,  Shayu Li

IPC分类号： G03F7/004 ,  C07C39/15 ,  C07C37/16 ,  C07C68/06 ,  C07C41/01 ,  C07C43/205 ,  C07C69/96

CPC分类号： G03F7/0045 ,  C07C37/16 ,  C07C39/15 ,  C07C39/16 ,  C07C39/17 ,  C07C41/01 ,  C07C43/205 ,  C07C43/2055 ,  C07C43/21 ,  C07C68/06 ,  C07C69/96 ,  C07C2603/92 ,  G03F7/0002 ,  G03F7/0382 ,  G03F7/0392

摘要： The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.

摘要翻译： 本发明提供一种以双酚A为主要结构的分子玻璃光致抗蚀剂（I和II）及其制备方法。 将分子玻璃光致抗蚀剂与光致酸发生剂，交联剂，光致抗蚀剂溶剂和其它添加剂一起配制成正性或负性光致抗蚀剂。 通过旋涂在硅晶片上形成具有均匀厚度的光致抗蚀剂。 光致抗蚀剂制剂可用于现代光刻，例如248nm光刻，193nm光刻，极紫外（EUV）光刻，纳米压印光刻，电子束光刻，尤其是在EUV光刻技术中。