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1.发明申请CHARGE COUPLED DEVICE BASED ON ATOMICALLY LAYERED VAN DER WAALS SOLID STATE FILM FOR OPTO-ELECTRONIC MEMORY AND IMAGE CAPTURE 有权基于原子层数的电荷耦合器件用于光电存储器和图像捕获的固态膜公开(公告)号：US20160118527A1
公开(公告)日：2016-04-28
申请号：US14522215
申请日：2014-10-23
申请人： Sidong Lei , Liehui Ge , Antony George , Bo Li , Robert Vajtai , Pulickel M. Ajayan
发明人： Sidong Lei , Liehui Ge , Antony George , Bo Li , Robert Vajtai , Pulickel M. Ajayan
IPC分类号： H01L31/113 , H01L31/18 , H01L31/0352 , H01L31/0224
CPC分类号： H01L31/1136 , H01L27/14609 , H01L27/14806 , H01L31/022408 , H01L31/028 , H01L31/0322 , H01L31/035281 , H01L31/1133 , H01L31/18 , Y02E10/541 , Y02E10/547
摘要： An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.
摘要翻译： 光电传感器可以提供一层或多层原子层状感光材料。 传感器可以包括栅极电极层，与栅极电极层接触的电介质层，以及沉积在电介质层上的感光层的工作介质层。 工作介质层可以提供一层或多层一层或多层材料，其中一层或多层中的每一层都是原子层。 传感器还可以包括与工作介质层接触的侧电极。
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2.发明授权Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture 有权基于原子分层的电荷耦合器件用于光电存储器和图像捕获的固态膜公开(公告)号：US09431565B2
公开(公告)日：2016-08-30
申请号：US14522215
申请日：2014-10-23
申请人： Sidong Lei , Liehui Ge , Antony George , Bo Li , Robert Vajtai , Pulickel M. Ajayan
发明人： Sidong Lei , Liehui Ge , Antony George , Bo Li , Robert Vajtai , Pulickel M. Ajayan
IPC分类号： H01L21/00 , H01L31/113 , H01L31/0224 , H01L31/18 , H01L31/0352
CPC分类号： H01L31/1136 , H01L27/14609 , H01L27/14806 , H01L31/022408 , H01L31/028 , H01L31/0322 , H01L31/035281 , H01L31/1133 , H01L31/18 , Y02E10/541 , Y02E10/547
摘要： An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.
摘要翻译： 光电传感器可以提供一层或多层原子层状感光材料。 传感器可以包括栅极电极层，与栅极电极层接触的电介质层，以及沉积在电介质层上的感光层的工作介质层。 工作介质层可以提供一层或多层一层或多层材料，其中一层或多层中的每一层都是原子层。 传感器还可以包括与工作介质层接触的侧电极。
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