公开(公告)号：US20080169749A1

公开(公告)日：2008-07-17

申请号：US11865249

申请日：2007-10-01

申请人： Yoon-Jin Kim ,  Dong-Sik Zang ,  Jae-Myung Kim ,  Hee-Sung Moon ,  Gabdullin Pavel Garifovich ,  Davydov Sergey Nikolayevich ,  Korablev Vadim Vasilyevich ,  Kravchik Alexander Efimovich ,  Sokolov Vasily Vasilyevich ,  Kukushkina Yulia Alexandrovna ,  Tereshchenko Gennady Fedorovich

发明人： Yoon-Jin Kim ,  Dong-Sik Zang ,  Jae-Myung Kim ,  Hee-Sung Moon ,  Gabdullin Pavel Garifovich ,  Davydov Sergey Nikolayevich ,  Korablev Vadim Vasilyevich ,  Kravchik Alexander Efimovich ,  Sokolov Vasily Vasilyevich ,  Kukushkina Yulia Alexandrovna ,  Tereshchenko Gennady Fedorovich

IPC分类号： H01J1/62 ,  C01B31/02

CPC分类号： H01J9/025 ,  C01B32/05 ,  H01J1/304 ,  H01J2201/30446

摘要： Provided are carbide derived carbon prepared by thermochemically reacting carbide compounds and a halogen element containing gas and extracting all atoms of the carbide compounds except carbon atoms, wherein the intensity ratios of the graphite G band at 1590 cm−1 to the disordered-induced D band at 1350 cm−1 are in the range of 0.3 through 5 when the carbide derived carbon is analyzed using Raman peak analysis, wherein the BET surface area of the carbide derived carbon is 1000 m2/g or more, wherein a weak peak or wide single peak of the graphite (002) surface is seen at 2θ=25° when the carbide derived carbon is analyzed using X-ray diffractometry, and wherein the electron diffraction pattern of the carbide derived carbon is the halo pattern typical of amorphous carbon when the carbide derived carbon is analyzed using electron microscopy. The emitter has good uniformity and a long lifetime. An emitter can be prepared using a more inexpensive method than that used to manufacture conventional carbon nanotubes.

摘要翻译： 提供通过碳化物化合物和含卤素元素的热化学反应制备的碳化物衍生碳，并且提取除碳原子以外的碳化物的所有原子，其中1590cm -1处的石墨G带与无序诱导的D带的强度比 当使用拉曼峰分析分析碳化物衍生碳时，1350cm -1处于0.3〜5的范围，其中碳化物衍生碳的BET表面积为1000m 2 / g以上，其中弱峰或宽单 当使用X射线衍射法分析碳化物衍生碳时，在2θ= 25°处观察到石墨（002）表面的峰值，并且其中碳化物衍生的碳的电子衍射图案是当碳化物 使用电子显微镜分析衍生碳。 发射体均匀性好，使用寿命长。 可以使用比用于制造常规碳纳米管的方法更便宜的方法来制备发射体。