公开(公告)号：US06573177B1

公开(公告)日：2003-06-03

申请号：US10076629

申请日：2002-02-19

申请人： Ming-Chung Liang ,  Stefan Tsai ,  Chai-Chi Chung

发明人： Ming-Chung Liang ,  Stefan Tsai ,  Chai-Chi Chung

IPC分类号： H01L216763

CPC分类号： H01L21/32139 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/312

摘要： A semiconductor manufacturing method that includes defining a substrate, depositing a first layer over the substrate, providing a protection layer over the first layer, providing a layer of photoresist over the protection layer, patterning and defining the photoresist layer to form at least one photoresist structure having at least one substantially vertical sidewall and one substantially horizontal top, depositing a photo-insensitive material over the at least one photoresist structure and the protection layer with a chemical-vapor deposition process having at least one reactive gas, wherein an amount of the photo-insensitive material deposited on the top of the photoresist structure is substantially greater than an amount of the photo-insensitive material deposited on the at least one sidewall of the photoresist structure, and wherein the protection layer is non-reactive with the at least one reactive gas, and anisotropically etching the protection layer and the layer to be etched.

摘要翻译： 一种半导体制造方法，其包括限定衬底，在所述衬底上沉积第一层，在所述第一层上方提供保护层，在所述保护层上提供光致抗蚀剂层，图案化和限定所述光致抗蚀剂层以形成至少一个光致抗蚀剂结构 具有至少一个基本上垂直的侧壁和一个基本上水平的顶部，在具有至少一个反应性气体的化学气相沉积工艺的情况下在所述至少一个光致抗蚀剂结构和所述保护层上沉积光不敏感材料，其中所述照片的量 沉积在光致抗蚀剂结构的顶部上的不敏感材料基本上大于沉积在光致抗蚀剂结构的至少一个侧壁上的光敏材料的量，并且其中保护层与至少一个反应性 气体和各向异性蚀刻保护层和被蚀刻层。