公开(公告)号：US20060079086A1

公开(公告)日：2006-04-13

申请号：US10964157

申请日：2004-10-12

申请人： Christian Boit ,  Theodore Lundquist ,  Chun-Cheng Tsao ,  Uwe Kerst ,  Stephan Schoemann ,  Peter Sadewater

发明人： Christian Boit ,  Theodore Lundquist ,  Chun-Cheng Tsao ,  Uwe Kerst ,  Stephan Schoemann ,  Peter Sadewater

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01J37/228 ,  H01J37/3056 ,  H01J2237/2482 ,  H01J2237/31749 ,  H01L21/76892 ,  H01L21/76898

摘要： Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.

摘要翻译： 在半导体衬底中研磨局部沟槽或接入孔以限定用于电路编辑的集成电路的结构的接入点。 导电体如聚焦离子束工具沉积在入口孔中，并且局部热被施加到用于硅化物形成的导体上，特别是在诸如扩散区域的半导体结构与沉积导体之间的边界处。 可以通过精确的激光施加，通过目标位置的电流产生或其组合在目标位置产生局部化的热量。

公开(公告)号：US07439168B2

公开(公告)日：2008-10-21

申请号：US10964157

申请日：2004-10-12

申请人： Christian Boit ,  Theodore R. Lundquist ,  Chun-Cheng Tsao ,  Uwe Jürgen Kerst ,  Stephan Schoemann ,  Peter Sadewater

发明人： Christian Boit ,  Theodore R. Lundquist ,  Chun-Cheng Tsao ,  Uwe Jürgen Kerst ,  Stephan Schoemann ,  Peter Sadewater

IPC分类号： H01L21/4763 ,  H01L21/3205

CPC分类号： H01J37/228 ,  H01J37/3056 ,  H01J2237/2482 ,  H01J2237/31749 ,  H01L21/76892 ,  H01L21/76898

摘要： Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.

摘要翻译： 在半导体衬底中研磨局部沟槽或接入孔以限定用于电路编辑的集成电路的结构的接入点。 导电体如聚焦离子束工具沉积在入口孔中，并且局部热被施加到用于硅化物形成的导体上，特别是在诸如扩散区域的半导体结构与沉积导体之间的边界处。 可以通过精确的激光施加，通过目标位置的电流产生或其组合在目标位置产生局部化的热量。