公开(公告)号：US20110133199A1

公开(公告)日：2011-06-09

申请号：US12985144

申请日：2011-01-05

申请人： Su-Hyuk KANG ,  Dai Yun LEE ,  Yong In PARK ,  Young Joo KIM

发明人： Su-Hyuk KANG ,  Dai Yun LEE ,  Yong In PARK ,  Young Joo KIM

IPC分类号： H01L29/786

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US20090159892A1

公开(公告)日：2009-06-25

申请号：US12318284

申请日：2008-12-23

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/336

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

公开(公告)号：US20070064179A1

公开(公告)日：2007-03-22

申请号：US11454505

申请日：2006-06-16

申请人： Yong-In Park ,  Dai-Yun Lee ,  Young-Joo Kim ,  Su-Hyuk Kang

发明人： Yong-In Park ,  Dai-Yun Lee ,  Young-Joo Kim ,  Su-Hyuk Kang

IPC分类号： G02F1/1333

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136209 ,  G02F2201/40 ,  H01L27/1214 ,  H01L27/1255 ,  H01L29/78633

摘要： A liquid crystal display (LCD) device and a method fabricating the same are provided. The LCD device and the method of fabricating the same have the shielding means formed directly on the array substrate instead of the color filter substrate of the opposite substrate to the array substrate.

摘要翻译： 提供一种液晶显示器（LCD）器件及其制造方法。 LCD装置及其制造方法具有直接形成在阵列基板上的屏蔽装置，而不是与阵列基板相对的基板的滤色器基板。

公开(公告)号：US07888151B2

公开(公告)日：2011-02-15

申请号：US12318284

申请日：2008-12-23

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L21/00

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US08848142B2

公开(公告)日：2014-09-30

申请号：US11454505

申请日：2006-06-16

申请人： Yong-In Park ,  Dai-Yun Lee ,  Young-Joo Kim ,  Su-Hyuk Kang

发明人： Yong-In Park ,  Dai-Yun Lee ,  Young-Joo Kim ,  Su-Hyuk Kang

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1345

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136209 ,  G02F2201/40 ,  H01L27/1214 ,  H01L27/1255 ,  H01L29/78633

摘要： A liquid crystal display (LCD) device and a method fabricating the same are provided. The LCD device and the method of fabricating the same have the shielding means formed directly on the array substrate instead of the color filter substrate of the opposite substrate to the array substrate.

摘要翻译： 提供一种液晶显示器（LCD）器件及其制造方法。 LCD装置及其制造方法具有直接形成在阵列基板上的屏蔽装置，而不是与阵列基板相对的基板的滤色器基板。

公开(公告)号：US08183567B2

公开(公告)日：2012-05-22

申请号：US12985144

申请日：2011-01-05

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L31/00 ,  H01L29/10 ,  H01L20/04

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US07482628B2

公开(公告)日：2009-01-27

申请号：US11449620

申请日：2006-06-09

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L31/00 ,  H01L29/10 ,  H01L20/04

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。