公开(公告)号：US20090159892A1

公开(公告)日：2009-06-25

申请号：US12318284

申请日：2008-12-23

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L29/786 ,  H01L33/00 ,  H01L21/336

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

公开(公告)号：US07888151B2

公开(公告)日：2011-02-15

申请号：US12318284

申请日：2008-12-23

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L21/00

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US08183567B2

公开(公告)日：2012-05-22

申请号：US12985144

申请日：2011-01-05

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L31/00 ,  H01L29/10 ,  H01L20/04

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US07482628B2

公开(公告)日：2009-01-27

申请号：US11449620

申请日：2006-06-09

申请人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

发明人： Su Hyuk Kang ,  Dai Yun Lee ,  Yong In Park ,  Young Joo Kim

IPC分类号： H01L31/00 ,  H01L29/10 ,  H01L20/04

CPC分类号： H01L29/42384 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/14621 ,  H01L29/78621

摘要： An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

摘要翻译： 用于LCD器件的阵列衬底包括：第一TFT，包括第一半导体层，第一栅电极，其中第一栅电极直接位于第一半导体层上; 从所述第一栅电极沿着所述第一半导体层的边缘延伸的第一突起; 包括第二半导体层的第二TFT，第二栅电极，其中所述第二栅电极直接在所述第二半导体层上; 从所述第二栅电极沿着所述第二半导体层的边缘延伸的第二突起; 连接到交叉数据的第三TFT和包括第三半导体层，第三栅电极的栅极线，其中第三栅极直接在第三半导体层上方; 从所述第三栅电极沿着所述第三半导体层的边缘延伸的第三突起; 和像素电极。

公开(公告)号：US07407842B2

公开(公告)日：2008-08-05

申请号：US11270583

申请日：2005-11-10

申请人： Dai Yun Lee ,  Yong In Park

发明人： Dai Yun Lee ,  Yong In Park

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/12 ,  H01L29/4908

摘要： Disclosed herein are a poly type thin film transistor substrate and a fabricating method thereof, which can reduce the number of processing steps without any process defects. The poly type thin film transistor substrate comprises forming transparent lower conductive layer and upper conductive layers on a substrate; forming a photo-resist pattern on the upper conductive layer; patterning the upper conductive layer by using the photo-resist pattern as a mask; ashing the photo-resist pattern so as to remain on the upper conductive layer; patterning the lower conductive layer by a dry etching method using the patterned upper conductive layer as a mask; and removing the remaining photo-resist pattern.

摘要翻译： 这里公开了一种多晶型薄膜晶体管基板及其制造方法，其可以减少加工步骤的数量而没有任何工艺缺陷。 多晶型薄膜晶体管基板包括在基板上形成透明的下导电层和上导电层; 在上导电层上形成光刻胶图案; 通过使用光刻胶图案作为掩模来图案化上导电层; 灰化所述光刻胶图形以保留在所述上导电层上; 通过使用图案化的上导电层作为掩模的干蚀刻方法图案化下导电层; 并除去剩余的光刻胶图形。

公开(公告)号：US07396765B2

公开(公告)日：2008-07-08

申请号：US11254764

申请日：2005-10-21

申请人： Dai Yun Lee ,  Yong In Park

发明人： Dai Yun Lee ,  Yong In Park

IPC分类号： H01L21/44

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  Y10S257/915

摘要： A method of fabricating a liquid crystal display device according to an embodiment of the present invention includes forming first and second conductive layers on a substrate, wherein the first layer is transparent; patterning the second conductive layer and the first conductive layer using the photo-resist pattern as a mask; etching at least one lateral part of the patterned second conductive layer using the photo-resist pattern as a mask; and removing the remaining photo-resist pattern.

摘要翻译： 根据本发明实施例的制造液晶显示装置的方法包括在基板上形成第一和第二导电层，其中第一层是透明的; 使用光致抗蚀剂图案作为掩模来图案化第二导电层和第一导电层; 使用光致抗蚀剂图案作为掩模蚀刻图案化的第二导电层的至少一个侧面部分; 并除去剩余的光刻胶图形。

公开(公告)号：US07999267B2

公开(公告)日：2011-08-16

申请号：US12588954

申请日：2009-11-03

申请人： Yong In Park

发明人： Yong In Park

IPC分类号： H01L31/00

CPC分类号： G02F1/13454 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255

摘要： A display device includes a substrate having a display region and a driver region; a gate line and a data line crossing each other to define a pixel region in the display region, the pixel region having a pixel electrode; an insulation layer between the gate line and the data line; a first thin film transistor in the display region; and a second thin film transistor having a first polarity and a third thin film transistor having a second polarity in the driver region, wherein the pixel electrode, the gate line and the gate electrodes of the first to third thin film transistors have a double-layer structure in which a metal layer is formed on a transparent conductive layer, and the transparent conductive layer of the pixel electrode is exposed through a transmission hole passing through the insulation layer and the metal layer in the pixel region.

摘要翻译： 显示装置包括具有显示区域和驱动器区域的基板; 栅极线和数据线彼此交叉以限定显示区域中的像素区域，像素区域具有像素电极; 栅极线与数据线之间的绝缘层; 显示区域中的第一薄膜晶体管; 以及具有第一极性的第二薄膜晶体管和在驱动器区域中具有第二极性的第三薄膜晶体管，其中第一至第三薄膜晶体管的像素电极，栅极线和栅电极具有双层 其中在透明导电层上形成金属层的结构，并且像素电极的透明导电层通过穿过像素区域中的绝缘层和金属层的透射孔而露出。

公开(公告)号：US07923309B2

公开(公告)日：2011-04-12

申请号：US11639776

申请日：2006-12-14

申请人： Yong In Park ,  Jae Young Oh ,  Soo Pool Kim

发明人： Yong In Park ,  Jae Young Oh ,  Soo Pool Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2201/124 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks.

摘要翻译： 公开了一种薄膜晶体管阵列基板和薄膜晶体管阵列基板的制造方法。 具体地，可以使用减少数量的掩模来形成薄膜晶体管阵列。

公开(公告)号：US07719639B2

公开(公告)日：2010-05-18

申请号：US11524433

申请日：2006-09-21

申请人： Joon Young Yang ,  Yong In Park ,  Sang Hyun Kim

发明人： Joon Young Yang ,  Yong In Park ,  Sang Hyun Kim

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136231

摘要： A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

摘要翻译： 半透射型液晶显示装置包括在基板上彼此交叉以形成多个像素区域的多个栅极和数据线，栅极和数据线的每个交叉处的薄膜晶体管，所述薄膜晶体管包括 半导体层以及源极和漏极电极分别与源极和漏极区域接触的像素区域内的投影种子图案沿着与薄膜晶体管的半导体层相同的层，以及与薄膜的漏电极接触的反射电极 并且具有对应于投影种子图案的反射投影。

公开(公告)号：US07701524B2

公开(公告)日：2010-04-20

申请号：US11167112

申请日：2005-06-28

申请人： Yong In Park ,  Juhn Suk Yoo

发明人： Yong In Park ,  Juhn Suk Yoo

IPC分类号： G02F1/136 ,  G02F1/1333 ,  G02F1/1343 ,  H01L27/14 ,  H01L21/00

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136231

摘要： A method for fabricating an LCD device includes providing a substrate; forming an active pattern having a source region, a drain region and a channel region on the substrate; forming a first insulation film on the substrate; forming a gate electrode, a gate line and a pixel electrode on the substrate; forming a second insulation film on the substrate; forming a contact hole exposing a portion of the source and drain regions by removing a portion of the first and second insulation films; patterning the second insulation film on the pixel electrode at least a size corresponding to a form of the pixel electrode; and forming a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region through the contact hole.

摘要翻译： 一种用于制造LCD装置的方法，包括提供基板; 在衬底上形成具有源极区，漏极区和沟道区的有源图案; 在基板上形成第一绝缘膜; 在所述基板上形成栅电极，栅极线和像素电极; 在所述基板上形成第二绝缘膜; 通过去除所述第一和第二绝缘膜的一部分而形成暴露所述源区和漏区的一部分的接触孔; 在像素电极上图案化至少一个对应于像素电极形式的尺寸的第二绝缘膜; 以及通过所述接触孔形成与所述源极区域电连接的源电极和与所述漏极区域电连接的漏极电极。