公开(公告)号：US20130221534A1

公开(公告)日：2013-08-29

申请号：US13478815

申请日：2012-05-23

申请人： Sun-Rong Jan ,  Che-Yu Yeh ,  Chee Wee Liu ,  Chien-Hua Huang ,  Bing J. Sheu

发明人： Sun-Rong Jan ,  Che-Yu Yeh ,  Chee Wee Liu ,  Chien-Hua Huang ,  Bing J. Sheu

IPC分类号： H01L23/498

CPC分类号： H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.

摘要翻译： 半导体器件包括具有第一侧和第二侧的衬底，其中在衬底的第一侧附近形成多个有源电路，并且多个通孔布置成多边形并从第一侧延伸的多个通孔硅通孔 到所述第二面，其中所述多边形形状具有六个以上的边，并且其中每个通过硅通孔被放置在所述多边形形状的相应顶点处。

公开(公告)号：US10002820B2

公开(公告)日：2018-06-19

申请号：US13478815

申请日：2012-05-23

申请人： Sun-Rong Jan ,  Che-Yu Yeh ,  Chee Wee Liu ,  Chien-Hua Huang ,  Bing J. Sheu

发明人： Sun-Rong Jan ,  Che-Yu Yeh ,  Chee Wee Liu ,  Chien-Hua Huang ,  Bing J. Sheu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.

公开(公告)号：US20060099772A1

公开(公告)日：2006-05-11

申请号：US10982375

申请日：2004-11-05

申请人： Cheng-Ya Yu ,  Sun-Rong Jan ,  Shu-Tong Chang ,  Chee-Wee Liu

发明人： Cheng-Ya Yu ,  Sun-Rong Jan ,  Shu-Tong Chang ,  Chee-Wee Liu

IPC分类号： H01L21/46

CPC分类号： H01L21/7624 ,  H01L21/823807 ,  H01L29/7842 ,  H01L29/786

摘要： A method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices is disclosed. The method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices includes the following steps: (a) providing a substrate, (b) fixing the substrate, (c) applying a stress upon the substrate, and (d) inducing a strain in one of a device and a circuit by stressing the substrate.

摘要翻译： 公开了一种具有用于增强集成电路或装置的速度的机械应变硅的方法。 具有用于增强集成电路或器件的速度的机械应变硅的方法包括以下步骤：（a）提供衬底，（b）固定衬底，（c）在衬底上施加应力，以及（d）诱导 通过施加基板在器件和电路之一中的应变。

公开(公告)号：US07307004B2

公开(公告)日：2007-12-11

申请号：US10982375

申请日：2004-11-05

申请人： Cheng-Ya Yu ,  Sun-Rong Jan ,  Shu-Tong Chang ,  Chee-Wee Liu

发明人： Cheng-Ya Yu ,  Sun-Rong Jan ,  Shu-Tong Chang ,  Chee-Wee Liu

IPC分类号： H01L21/00

CPC分类号： H01L21/7624 ,  H01L21/823807 ,  H01L29/7842 ,  H01L29/786

摘要： A method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices is disclosed. The method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices includes the following steps: (a) providing a substrate, (b) fixing the substrate, (c) applying a stress upon the substrate, and (d) inducing a strain in one of a device and a circuit by stressing the substrate.

摘要翻译： 公开了一种具有用于增强集成电路或装置的速度的机械应变硅的方法。 具有用于增强集成电路或器件的速度的机械应变硅的方法包括以下步骤：（a）提供衬底，（b）固定衬底，（c）在衬底上施加应力，以及（d）诱导 通过施加基板在器件和电路之一中的应变。