公开(公告)号：US09093157B2

公开(公告)日：2015-07-28

申请号：US13670731

申请日：2012-11-07

申请人： Donghun Kwak ,  Suna Kim ,  Cheon An Lee ,  Ho-Chul Lee

发明人： Donghun Kwak ,  Suna Kim ,  Cheon An Lee ,  Ho-Chul Lee

IPC分类号： G11C16/10 ,  G11C8/08 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C8/08 ,  G11C16/0483

摘要： A three-dimensional nonvolatile memory device comprises a plurality of cell strings arranged perpendicular to a substrate. The nonvolatile memory device is programmed by identifying a selected word line and a plurality of unselected word lines connected to at least one of the cell stings, and sequentially applying a negative voltage and a pass voltage to the selected and unselected word lines, and then applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines.

摘要翻译： 三维非易失性存储器件包括垂直于衬底布置的多个单元串。 非易失性存储器件通过识别所选择的字线和连接到至少一个电池单元的多个未选择的字线来编程，并且对所选择的和未选择的字线顺序地施加负电压和通过电压，然后施加 在继续向未选择的字线施加通过电压的同时对所选字线的编程电压。

公开(公告)号：US20130242675A1

公开(公告)日：2013-09-19

申请号：US13670731

申请日：2012-11-07

申请人： DONGHUN KWAK ,  SUNA KIM ,  CHEON AN LEE ,  HO-CHUL LEE

发明人： DONGHUN KWAK ,  SUNA KIM ,  CHEON AN LEE ,  HO-CHUL LEE

IPC分类号： G11C5/14

CPC分类号： G11C16/10 ,  G11C8/08 ,  G11C16/0483

摘要： A three-dimensional nonvolatile memory device comprises a plurality of cell strings arranged perpendicular to a substrate. The nonvolatile memory device is programmed by identifying a selected word line and a plurality of unselected word lines connected to at least one of the cell stings, and sequentially applying a negative voltage and a pass voltage to the selected and unselected word lines, and then applying a program voltage to the selected word line while continuing to apply the pass voltage to the unselected word lines.

摘要翻译： 三维非易失性存储器件包括垂直于衬底布置的多个单元串。 非易失性存储器件通过识别所选择的字线和连接到至少一个电池单元的多个未选择的字线来编程，并且对所选择的和未选择的字线顺序地施加负电压和通过电压，然后施加 在继续向未选择的字线施加通过电压的同时对所选字线的编程电压。