公开(公告)号：US4731303A

公开(公告)日：1988-03-15

申请号：US886068

申请日：1986-07-16

申请人： Shin-ichi Hirano ,  Susumu Yamaya

发明人： Shin-ichi Hirano ,  Susumu Yamaya

IPC分类号： B23B27/14 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C28/04 ,  C04B35/58 ,  B32B15/04

CPC分类号： C04B41/009 ,  B23B27/148 ,  C04B41/5064 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C28/04

摘要： A cubic boron nitride coated material comprises a substrate, an outer layer consisting essentially of cubic boron nitride and formed on a surface of the substrate, and at least one intermediate layer interposed between the substrate and outer layer, the intermediate layer comprising at least one nitrogen-containing compound selected from the nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof. Such a coated material can be produced by a method that comprises:providing, on the surface of a substrate, at least one intermediate layer comprised of at least one nitrogen-containing compound selected from the group consisting of nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof; andcausing the outer cubic boron nitride layer to undergo oriented growth on a face of the layer of the at least one nitrogen-containing compound, the face being densely packed with nitrogen atoms.

摘要翻译： 立方氮化硼涂覆材料包括基材，基本上由立方氮化硼组成并形成在基材的表面上的外层和插入在基材和外层之间的至少一个中间层，中间层包含至少一个氮 其选自Al，Ga，In和Tl的氮化物和氮氧化物及其相互固溶体。 这样的涂覆材料可以通过以下方法制备：包括：在基材表面上提供至少一种中间层，该中间层由至少一种选自由Al，Ga的氮化物和氮氧化物组成的组中的含氮化合物组成， In和Tl及其相互固溶体; 并且使所述外立方氮化硼层在所述至少一种含氮化合物的层的表面上经历取向生长，所述表面被密集地填充有氮原子。

公开(公告)号：US5306320A

公开(公告)日：1994-04-26

申请号：US986907

申请日：1992-12-08

申请人： Tsutomu Mashimo ,  Minoru Nishida ,  Susumu Yamaya ,  Hisashi Yamasaki

发明人： Tsutomu Mashimo ,  Minoru Nishida ,  Susumu Yamaya ,  Hisashi Yamasaki

IPC分类号： C01B21/06 ,  C04B35/58

CPC分类号： C04B35/58007 ,  C01B21/0617 ,  C04B35/645 ,  C01P2002/72 ,  C01P2006/14

摘要： The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

摘要翻译： 本发明的目的是提供一种化学计量的B1型氮化钽及其烧结体。 B1型氮化钽及其烧结体，其中通常按照冲击压缩的方法制备化学计量的B1型氮化钽，其特征在于（a）X射线衍射基本上表现为归因于化学计量 B1型氮化钽单独但不是其他，（b）晶格间距D（h，k，l）的测量值与基于B1结构计算的相应值的偏差为0.00013nm或更小，（c ），晶格常数为0.4335〜0.4338nm，（d）电子衍射图像基本上显示出单一化学计量的B1型氮化钽特有的斑点，而不是其他情况，（e）TaNz中的Z值在一定范围内 为0.96-1.01。

公开(公告)号：US5201923A

公开(公告)日：1993-04-13

申请号：US735923

申请日：1991-07-25

申请人： Tsutomu Mashimo ,  Minoru Nishida ,  Susumu Yamaya ,  Hisashi Yamasaki

发明人： Tsutomu Mashimo ,  Minoru Nishida ,  Susumu Yamaya ,  Hisashi Yamasaki

IPC分类号： C01B21/06 ,  C04B35/58

CPC分类号： C04B35/58007 ,  C01B21/0617 ,  C04B35/645 ,  C01P2002/72 ,  C01P2006/14

摘要： The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X-ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

摘要翻译： 本发明的目的是提供一种化学计量的B1型氮化钽及其烧结体。 B1型氮化钽及其烧结体，其中通常按照冲击压缩的方法制备化学计量的B1型氮化钽，其特征在于（a）X射线衍射基本上表现为归因于 化学计量的B1型氮化钽，而不是其他，（b）晶格间距D（h，k，l）的测量值与基于B1结构计算的相应值的偏差为0.00013nm以下（ c）晶格常数为0.4335差±0.4338nm，（d）电子衍射图像基本上显示出单独的化学计量的B1型氮化钽特有的斑点，而不是其他的，（e）TaNz中的Z的值在 范围为0.96-1.01。

公开(公告)号：US4306139A

公开(公告)日：1981-12-15

申请号：US106719

申请日：1979-12-26

申请人： Yukio Shinozaki ,  Katsutoshi Naruse ,  Teruo Harada ,  Sadao Ohishibashi ,  Susumu Yamaya ,  Akira Fukawa

发明人： Yukio Shinozaki ,  Katsutoshi Naruse ,  Teruo Harada ,  Sadao Ohishibashi ,  Susumu Yamaya ,  Akira Fukawa

IPC分类号： B04B1/20 ,  B23K9/23 ,  B23K31/02 ,  B23K35/30 ,  C04B37/02 ,  C22C29/06 ,  C22C29/08 ,  B23K9/04 ,  B23K9/225

CPC分类号： B23K35/3033 ,  B23K31/025 ,  B23K9/232

摘要： Disclosed is a method for welding wear-resisting hard metals directly to iron base members which are slide or wear members of machinery. Hard metals comprising a tungsten carbide and a binder consisting of 15 to 30% by weight of Ni and/or Co is employed as said hard metals. A Ni alloy metal containing no Cr is used as a filler metal.

摘要翻译： 公开了将耐磨硬金属直接焊接到作为机械的滑动或磨损构件的铁基构件的方法。 使用包含碳化钨和由15〜30重量％的Ni和/或Co组成的粘合剂的硬质合金作为所述硬质合金。 使用不含Cr的Ni合金金属作为填充金属。

公开(公告)号：US4762729A

公开(公告)日：1988-08-09

申请号：US126884

申请日：1987-11-30

申请人： Shin-ichi Hirano ,  Susumu Yamaya

发明人： Shin-ichi Hirano ,  Susumu Yamaya

IPC分类号： B23B27/14 ,  C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C28/04 ,  B05D3/06

CPC分类号： C04B41/009 ,  B23B27/148 ,  C04B41/5064 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C23C28/04

摘要： There are disclosed a cubic boron nitride coated material including a substrate and an outer layer composed principally of cubic boron nitride and formed on a surface of the substrate, comprising an intermediate layer fored of at least one intermediate layer and interposed between the substrate and outer layer, the intermediate between the substrate and outer layer, the intermediate layer or the outermost one of intermediate layers being formed of a layer of at least one nitrogen-containing compound selected from the nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof, and a producing method of the same which comprises: providing, on the surface of the substrate, an intermediate layer formed of at least one intermediate layer, the intermediate layer or the outermost one of intermediate layers being formed of a layer of at least one nitrogen-containing compound selected from the group consisting of nitrides and nitroxides of Al, Ga, In and Tl and mutual solid solutions thereof; and causing the outer layer to undergo oriented growth on a face of the layer of the at least one nitrogen-containing compound, the face being densely packed with nitrogen atoms.