-
公开(公告)号:US08637846B1
公开(公告)日:2014-01-28
申请号:US13601127
申请日:2012-08-31
CPC分类号: H01L29/24 , H01G9/04 , H01L21/02565
摘要: Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.
摘要翻译: 本文描述了包括氧化锆材料的半导体结构及其形成方法。 作为示例,半导体结构可以包括氧化锆材料,钙钛矿结构材料和形成在氧化锆材料和钙钛矿结构材料之间的贵金属材料。