公开(公告)号：US20090304490A1

公开(公告)日：2009-12-10

申请号：US12135805

申请日：2008-06-09

申请人： Takayuki Kihara ,  Masataka Hourai ,  Yuki Murata ,  Kazushige Takaishi ,  Seiji Sugimoto ,  Tadashi Kanda

发明人： Takayuki Kihara ,  Masataka Hourai ,  Yuki Murata ,  Kazushige Takaishi ,  Seiji Sugimoto ,  Tadashi Kanda

IPC分类号： H01L21/67

CPC分类号： H01L21/6732

摘要： The present invention is directed to provide a method for holding a silicon wafer, which can reduce contact scratches in contact with support members when holding a back surface of the silicon wafer, as well as prevent the wafer from bending when holding the back surface of the silicon wafer. The back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from a center thereof. The silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. The silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member.

摘要翻译： 本发明的目的在于提供一种保持硅晶片的方法，当保持硅晶片的背面时，可以减少与支撑部件接触的接触划痕，并且当保持硅晶片的背面时，防止晶片弯曲 硅晶片。 直径为300毫米，厚度为700微米至1000微米的硅晶片的背面保持与支撑构件或抽吸构件接触，特别是保持在硅晶片的半径为0.50至 0.80从其中心。 硅晶片保持在晶片平面内的最大位移量为300微米以下的状态。 在保持硅晶片的背面与支撑构件或抽吸构件接触的所有过程中，硅晶片背面保持在保持区域内。

公开(公告)号：US5204575A

公开(公告)日：1993-04-20

申请号：US770178

申请日：1991-10-02

申请人： Tadashi Kanda ,  Koji Asano ,  Hiroshi Shimizu ,  Yuji Suzuki

发明人： Tadashi Kanda ,  Koji Asano ,  Hiroshi Shimizu ,  Yuji Suzuki

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/25

CPC分类号： H03H9/1452 ,  H03H9/02818

摘要： A surface acoustic wave resonator having an interdigital transducer on a piezoelectric substrate. Grating reflectors, which have electrode strips of the same width and the same pitch as those of electrodes of the interdigital transducer and of a number smaller than 1/5 that of said electrodes of said interdigital transducer, are disposed at the intervals equal to said pitch at both sides of said interdigital transducer on a surface wave propagation path. The electrode portion of the interdigital transducer is weighted so that the aperture of the interdigital transducer is maximum at the center of the interdigital transducer and uniformly decreases toward its both sides along respective sides of a rhombus with its vertices at the centers of the outermost electrode strips of the grating reflectors.