ELASTIC WAVE DEVICE
    2.
    发明申请
    ELASTIC WAVE DEVICE 审中-公开

    公开(公告)号:US20180254765A1

    公开(公告)日:2018-09-06

    申请号:US15973562

    申请日:2018-05-08

    发明人: Kenji INATE

    摘要: An elastic wave device includes a piezoelectric substrate, a first elastic wave element on the piezoelectric substrate and including at least one first interdigital transducer electrode and a first reflector in an area of the first interdigital transducer electrode at one side in a propagation direction of elastic waves, and a second elastic wave element on the piezoelectric substrate and including at least one second interdigital transducer electrode and a second reflector in an area of the second interdigital transducer electrode at one side in the propagation direction of elastic waves. The first and second reflectors are disposed side by side in the propagation direction. A reflection member, between the first and second reflectors, reflects elastic waves in at least a direction different from the propagation direction.

    ELASTIC WAVE DEVICE
    3.
    发明申请
    ELASTIC WAVE DEVICE 审中-公开

    公开(公告)号:US20170222619A1

    公开(公告)日:2017-08-03

    申请号:US15488567

    申请日:2017-04-17

    IPC分类号: H03H9/02 H03H9/54 H03H9/145

    摘要: An elastic wave device includes a low acoustic velocity film, a piezoelectric film, and an IDT electrode, which are laminated on a high acoustic velocity material. In the IDT electrode, first electrode fingers, or second electrode fingers, or each of the first electrode fingers and the second electrode fingers, includes a wide width portion with a dimension in a width direction larger than a dimension at a center in a length direction and being provided closer to at least one of a side of a proximal end and a side of a distal end than a central region, at least one of a first busbar and a second busbar includes cavities arranged in a busbar length direction, and at least one of the first busbar and the second busbar includes an inner busbar portion which is positioned closer to a side of the first electrode fingers or a side of the second electrode fingers than the cavities are and which extends in the length direction of the first busbar and the second busbar, a central busbar portion that includes the cavities, and an outer busbar portion.

    ELASTIC WAVE FILTER DEVICE
    5.
    发明申请
    ELASTIC WAVE FILTER DEVICE 有权
    弹性波滤波器

    公开(公告)号:US20170005638A1

    公开(公告)日:2017-01-05

    申请号:US15265912

    申请日:2016-09-15

    摘要: A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where λc is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, VC-(P+SV) is an acoustic velocity of a P+SV wave, VC-SH is an acoustic velocity of a SH wave, and VC-HO is an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, VC-(P+SV) fF-H, or VC-SH/λC fF-H.

    摘要翻译: 定义了包括高声速构件,低声速膜,压电膜和IDT电极的SAW滤波器装置。 电耦合到滤波器的梳状电容电极设置在压电膜上。 其中λc是由梳状电容电极的电极指间距决定的波长,并且在由梳状电容电极产生的弹性波的模式中,VC-(P + SV)是P + SV波的声速, VC-SH是SH波的声速,VC-HO是在SH波的高阶模式中在最低频率侧的高阶模式的声速,VC-(P + SV ) fF-H或VC- SH /λC fF-H。

    SURFACE ACOUSTIC WAVE FILTER
    6.
    发明申请
    SURFACE ACOUSTIC WAVE FILTER 审中-公开
    表面声波滤波器

    公开(公告)号:US20160285431A1

    公开(公告)日:2016-09-29

    申请号:US15079259

    申请日:2016-03-24

    IPC分类号: H03H9/64

    摘要: A ladder-type surface acoustic wave filter includes interdigital transducer electrodes disposed on a LiTaO3 piezoelectric substrate, and series resonators and parallel resonators defined by the interdigital transducer electrodes, and utilizes a leaky wave that propagates on the LiTaO3 piezoelectric substrate. A bandwidth ratio indicating a bandwidth of a passband of the ladder-type surface acoustic wave filter is about 2.5% or greater, and a cutoff frequency due to bulk wave radiation of one of the parallel resonators, is in a frequency range higher than the passband.

    摘要翻译: 梯形声表面波滤波器包括设置在LiTaO 3压电基片上的叉指式换能器电极,以及由指数式换能器电极限定的串联谐振器和并联谐振器,并利用在LiTaO3压电基片上传播的泄漏波。 表示梯型声表面波滤波器的通带的带宽的带宽比约为2.5%以上,并且由并联谐振器中的一个的体波辐射导致的截止频率处于高于通带的频率范围 。

    ELASTIC WAVE ELEMENT WITH INTERDIGITAL TRANSDUCER ELECTRODE
    7.
    发明申请
    ELASTIC WAVE ELEMENT WITH INTERDIGITAL TRANSDUCER ELECTRODE 有权
    带数字传感器电极的弹性波形元件

    公开(公告)号:US20150333731A1

    公开(公告)日:2015-11-19

    申请号:US14809994

    申请日:2015-07-27

    IPC分类号: H03H9/25

    摘要: An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.

    摘要翻译: 弹性波装置包括与具有包括IDT电极的第一汇流条电极和第二汇流条电极之一的汇流条电极区域的压电基板相接触的指数间换能器(IDT)电极,交替设置的区域,其中第一电极 手指交替地设置有IDT电极的第二电极指,以及包括第一电极指和第二电极指中的一个的中间区。 电介质膜形成在中间区域的至少一部分中并与IDT电极的上表面接触。 电介质膜包括其中在电介质膜中传播的横波的声速低于交替设置区域的主弹性波的声速的介质。 电介质膜不形成在交替设置的区域中。