摘要:
An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 5° or greater and 18° or less; and a grating electrode that is formed of one or more metal films stacked on the lithium tantalate substrate, a number of the one or more metal films being n (n is a natural number), excites an acoustic wave, and meets a condition: 0.16 λ ≤ ∑ i = 1 n ( hi × ρ i ρ 0 ) ≤ 0.24 λ where ρi represents a density of each metal film of the one or more metal films, hi represents a film thickness of the each metal film, ρ0 represents a density of Mo, and λ represents a pitch.
摘要:
An elastic wave device includes a piezoelectric substrate, a first elastic wave element on the piezoelectric substrate and including at least one first interdigital transducer electrode and a first reflector in an area of the first interdigital transducer electrode at one side in a propagation direction of elastic waves, and a second elastic wave element on the piezoelectric substrate and including at least one second interdigital transducer electrode and a second reflector in an area of the second interdigital transducer electrode at one side in the propagation direction of elastic waves. The first and second reflectors are disposed side by side in the propagation direction. A reflection member, between the first and second reflectors, reflects elastic waves in at least a direction different from the propagation direction.
摘要:
An elastic wave device includes a low acoustic velocity film, a piezoelectric film, and an IDT electrode, which are laminated on a high acoustic velocity material. In the IDT electrode, first electrode fingers, or second electrode fingers, or each of the first electrode fingers and the second electrode fingers, includes a wide width portion with a dimension in a width direction larger than a dimension at a center in a length direction and being provided closer to at least one of a side of a proximal end and a side of a distal end than a central region, at least one of a first busbar and a second busbar includes cavities arranged in a busbar length direction, and at least one of the first busbar and the second busbar includes an inner busbar portion which is positioned closer to a side of the first electrode fingers or a side of the second electrode fingers than the cavities are and which extends in the length direction of the first busbar and the second busbar, a central busbar portion that includes the cavities, and an outer busbar portion.
摘要:
A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.
摘要:
A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where λc is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, VC-(P+SV) is an acoustic velocity of a P+SV wave, VC-SH is an acoustic velocity of a SH wave, and VC-HO is an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, VC-(P+SV) fF-H, or VC-SH/λC fF-H.
摘要:
A ladder-type surface acoustic wave filter includes interdigital transducer electrodes disposed on a LiTaO3 piezoelectric substrate, and series resonators and parallel resonators defined by the interdigital transducer electrodes, and utilizes a leaky wave that propagates on the LiTaO3 piezoelectric substrate. A bandwidth ratio indicating a bandwidth of a passband of the ladder-type surface acoustic wave filter is about 2.5% or greater, and a cutoff frequency due to bulk wave radiation of one of the parallel resonators, is in a frequency range higher than the passband.
摘要:
An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.
摘要:
An electroacoustic component is specified in which the disturbing contributions of undesired wave modes are reduced. For this purpose, a component comprises includes a piezo layer, an electrode layer and a separating layer. A main mode and a secondary mode are capable of propagation in the component. The separating layer has an opposite thickness dependence for the frequencies of the main mode and of the secondary mode.
摘要:
A device, comprising a substrate having opposing first and second surfaces, a first surface acoustic wave resonator disposed on the first surface of the substrate, a second surface acoustic wave resonator disposed on the second surface of the substrate, a first adhesive layer sandwiched between the first surface acoustic wave resonator and the substrate, and a second adhesive layer sandwiched between the second surface acoustic wave resonator.
摘要:
A crystal oscillator having a plurality of quartz crystals that are manufactured so that the directional orientation of the acceleration sensitivity vector is essentially the same for each crystal. This enables convenient mounting of the crystals to a circuit assembly with consistent alignment of the acceleration vectors. The crystals are aligned with the acceleration vectors in an essentially anti-parallel relationship and can be coupled to the oscillator circuit in either a series or parallel arrangement. Mounting the crystals in this manner substantially cancels the acceleration sensitivity of the composite resonator and oscillator, rendering it less sensitive to vibrational forces and shock events.