公开(公告)号：US09732424B2

公开(公告)日：2017-08-15

申请号：US13393498

申请日：2010-08-24

申请人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

发明人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

IPC分类号： C23C16/455 ,  H01L21/687

CPC分类号： C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/68764 ,  H01L21/68771

摘要： Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

公开(公告)号：US20120152171A1

公开(公告)日：2012-06-21

申请号：US13393498

申请日：2010-08-24

申请人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

发明人： Jung-Hwan Lee ,  Woo-Young Park ,  Tae-Ho Hahm

IPC分类号： C23C16/455

CPC分类号： C23C16/45551 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/68764 ,  H01L21/68771

摘要： Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.

摘要翻译： 提供一种使用其的气体注入装置和基板处理装置。 气体注入装置包括多个气体注入单元，其设置在可旋转地设置在腔室内以支撑多个基板的基板支撑部分上方，多个气体注入单元相对于基板的中心点沿圆周方向设置 支撑部分将工艺气体注入到基底上。 其中，所述多个气体注入单元中的每一个包括顶板，其中设置有引入所述处理气体的入口和设置在所述顶板下方的注入板，以在所述注射板和所述顶板之间沿着 注入板在气体扩散空间下方具有多个气体注入孔，以将通过入口引入并在气体扩散空间中扩散的工艺气体注入到基板上。 在多个气体注入单元的至少一个气体注入单元中，处理气体在多个点被引入到气体扩散空间中。