公开(公告)号：US08395176B2

公开(公告)日：2013-03-12

申请号：US11076249

申请日：2005-03-10

申请人： Tae-yeong Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem ,  Jung-inn Sohn

发明人： Tae-yeong Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem ,  Jung-inn Sohn

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/387 ,  H01L2933/0016

摘要： A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

摘要翻译： 顶部发光氮化物系发光器件及其制造方法。 具有依次形成的基板，n包层，有源层和p型包覆层的顶部发射氮化物系发光器件包括：网格单元层，其通过栅格阵列形成在p包层上 由宽度小于30微米的导电材料形成的分离的电池，以改善电气和光学特性; 表面保护层，其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。 发光器件及其制造方法提供了对p型覆层的改善的欧姆接触，优异的I-V特性和高透光率，从而提高了器件的发光效率。

公开(公告)号：US07485897B2

公开(公告)日：2009-02-03

申请号：US11077536

申请日：2005-03-11

申请人： Tae-yeong Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeong Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016 ,  H01S5/3211 ,  H01S5/32341

摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.

摘要翻译： 氮化物系发光元件及其制造方法。 发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。 格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。 氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺 成长。