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19 条记录 (耗时 0.019 秒)

    Transmission
    3.
    发明授权
    Transmission 有权
    传输

    公开(公告)号：US07717816B2

    公开(公告)日：2010-05-18

    申请号：US11662327

    申请日：2005-08-31

    申请人： Hikosaburo Hiraki ,  Takehiro Komatsu

    发明人： Hikosaburo Hiraki ,  Takehiro Komatsu

    IPC分类号： F16H3/72

    CPC分类号： F16H3/728 ,  B60K6/365 ,  B60K6/445 ,  F16H47/04 ,  F16H2037/0866 ,  F16H2037/101 ,  F16H2037/102 ,  F16H2037/104 ,  F16H2037/108 ,  F16H2047/045 ,  F16H2200/2007 ,  F16H2200/201 ,  Y02T10/6239

    摘要： To provide a transmission capable of using pump/motors or generator/motors of smaller maximum torque and of small size. The transmission includes input shaft (4), output shaft (16), a mechanical transmission part interposed between input shaft (4) and output shaft (16) including planetary gear mechanisms (5), (6), and a hydrostatic transmission part interposed between input shaft (4) and output shaft (16) including three pump/motors (21), (25), (31). A rotating shaft of first pump/motor (21) and a rotating shaft of second pump/motor (25) are coupled to the mechanical transmission part. Clutches (34), (35), (36) are provided for coupling a rotating shaft of third pump/motor (31) to at least one of the rotating shaft of first pump/motor (21) and the rotating shaft of second pump/motor (25).

    摘要翻译： 提供能够使用较小的最大扭矩和小尺寸的泵/马达或发电机/马达的传动装置。 变速器包括输入轴（4），输出轴（16），介于输入轴（4）和输出轴（16）之间的机械传动部分，包括行星齿轮机构（5），（6） 在输入轴（4）和包括三个泵/马达（21），（25），（31）的输出轴（16）之间。 第一泵/马达（21）的旋转轴和第二泵/马达（25）的旋转轴联接到机械传动部分。 离合器（34），（35），（36）用于将第三泵/马达（31）的旋转轴与第一泵/马达（21）的旋转轴和第二泵 /马达（25）。

    Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
    4.
    发明授权
    Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
    单晶半导体制造装置及制造方法以及单晶锭

    公开(公告)号：US07160386B2

    公开(公告)日：2007-01-09

    申请号：US10487286

    申请日：2002-09-27

    申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

    发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

    IPC分类号： C30B13/02

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

    摘要翻译： 单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制， 公开了该方法。 通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。 通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。 此外，调节上侧加热装置（9a）和下侧加热装置（9b）产生的热量之间的比例以改变处理条件。 在调节中，由下侧加热装置（9b）产生的热量控制在相当大的比例。 不需要高成本和大尺寸的制造装置，可以控制单晶半导体的轴向氧浓度分布，单晶半导体的直径以及轴向氧浓度的微小波动。

    Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
    6.
    发明授权
    Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
    单晶半导体制造装置及制造方法以及单晶锭

    公开(公告)号：US07918934B2

    公开(公告)日：2011-04-05

    申请号：US11605752

    申请日：2006-11-29

    申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

    发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

    IPC分类号： C30B15/14

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

    摘要翻译： 单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制， 公开了该方法。 通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。 通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。 此外，调节由上侧加热装置（9a）产生的热量与通过下侧加热装置（9b）产生的热量之间的比率以改变处理条件。 在调整中，将下侧加热装置（9b）产生的热量控制在相当大的比例。 在不需要制造装置的高成本和大尺寸的情况下，控制单晶半导体的轴向的氧浓度分布，单晶半导体的直径和轴向的氧浓度的微小波动。