公开(公告)号：US07918934B2

公开(公告)日：2011-04-05

申请号：US11605752

申请日：2006-11-29

申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

IPC分类号： C30B15/14

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

摘要翻译： 单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制， 公开了该方法。 通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。 通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。 此外，调节由上侧加热装置（9a）产生的热量与通过下侧加热装置（9b）产生的热量之间的比率以改变处理条件。 在调整中，将下侧加热装置（9b）产生的热量控制在相当大的比例。 在不需要制造装置的高成本和大尺寸的情况下，控制单晶半导体的轴向的氧浓度分布，单晶半导体的直径和轴向的氧浓度的微小波动。

公开(公告)号：US07160386B2

公开(公告)日：2007-01-09

申请号：US10487286

申请日：2002-09-27

申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

IPC分类号： C30B13/02

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

摘要翻译： 单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制， 公开了该方法。 通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。 通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。 此外，调节上侧加热装置（9a）和下侧加热装置（9b）产生的热量之间的比例以改变处理条件。 在调节中，由下侧加热装置（9b）产生的热量控制在相当大的比例。 不需要高成本和大尺寸的制造装置，可以控制单晶半导体的轴向氧浓度分布，单晶半导体的直径以及轴向氧浓度的微小波动。

公开(公告)号：US20070068448A1

公开(公告)日：2007-03-29

申请号：US11605752

申请日：2006-11-29

申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

公开(公告)号：US20100100217A1

公开(公告)日：2010-04-22

申请号：US11989749

申请日：2006-06-07

申请人： Kenichi Bandoh ,  Shigeo Morimoto ,  Takuji Okumura ,  Tetsu Nagata ,  Masaru Shimada ,  Junsuke Tomioka ,  Yutaka Shiraishi ,  Takeshi Kodama

发明人： Kenichi Bandoh ,  Shigeo Morimoto ,  Takuji Okumura ,  Tetsu Nagata ,  Masaru Shimada ,  Junsuke Tomioka ,  Yutaka Shiraishi ,  Takeshi Kodama

IPC分类号： G05B13/04 ,  G05B13/02

CPC分类号： C30B15/20 ,  C30B29/06

摘要： To accurately control controlled object in a time variant system with a dead time such as a Czochralski method single crystal production device (CZ equipment). The dead time, the time constant, and the process gain value of a controlled object (CZ equipment) (200) are set. The process gain preset value has specified time variant characteristics. An output value y and its first-order and second-order time differentiated values are used as the state variable x of the controlled object (200). A nonlinear state predicting unit (206) predicts a state variable value x(t+Ld) at a future point in time after the dead time, based upon the current output value y, the dead time, the time constant, and the process gain preset value. A gain scheduled sliding mode control unit (212) performs a gain scheduled sliding mode control operation based upon the state variable value x(t+Ld) at the predicted future point in time, an output deviation z(t+Ld) at the future point in time, the time constant, and the set value of the process gain at the future point in time, to determine the manipulated variable uT of the controlled object (200).

摘要翻译： 在具有死区时间的时变系统中精确控制受控对象，例如Czochralski方法单晶生产装置（CZ设备）。 设定受控对象（CZ设备）（200）的死区时间，时间常数和过程增益值。 过程增益预设值具有指定的时变特征。 使用输出值y及其一阶和二阶时间微分值作为受控对象（200）的状态变量x。 非线性状态预测单元​​（206）基于当前输出值y，死区时间，时间常数和处理增益来预测死区时间后的未来时间点的状态变量值x（t + Ld） 预设值。 增益调度滑动模式控制单元（212）基于预测的未来时间点的状态变量值x（t + Ld），未来的输出偏差z（t + Ld），执行增益调度滑动模式控制操作 时间常数和未来时间点处理增益的设定值，以确定受控对象（200）的操纵变量uT。

公开(公告)号：US08150784B2

公开(公告)日：2012-04-03

申请号：US11989749

申请日：2006-06-07

申请人： Kenichi Bandoh ,  Shigeo Morimoto ,  Takuji Okumura ,  Tetsu Nagata ,  Masaru Shimada ,  Junsuke Tomioka ,  Yutaka Shiraishi ,  Takeshi Kodama

发明人： Kenichi Bandoh ,  Shigeo Morimoto ,  Takuji Okumura ,  Tetsu Nagata ,  Masaru Shimada ,  Junsuke Tomioka ,  Yutaka Shiraishi ,  Takeshi Kodama

IPC分类号： G06E1/00 ,  G06E3/00 ,  G06F15/18 ,  G06G7/00

CPC分类号： C30B15/20 ,  C30B29/06

摘要： A device controls an object in a time variant system with a dead time such as a Czochralski method single crystal production device (CZ equipment). The dead time, time constant, and process gain value of an object (CZ equipment) are set. The process gain preset value has time variant characteristics. An output value and its first-order and second-order time differentiated values serve as the state variable. A nonlinear state predicting unit predicts a state variable value at a future time, based upon the current output value, dead time, time constant, and process gain preset value. A gain scheduled sliding mode control unit performs a gain scheduled sliding mode control operation based upon the state variable value at the future time, an output deviation at the future time, the time constant, and the set value of the process gain at the future time, to determine the manipulated variable of the object.

摘要翻译： 设备控制具有死区时间的时变系统中的对象，如Czochralski方法单晶生产设备（CZ设备）。 设置物体（CZ设备）的死区时间，时间常数和过程增益值。 过程增益预设值具有时变特征。 输出值及其一阶和二阶时间微分值作为状态变量。 非线性状态预测单元​​基于当前输出值，死区时间，时间常数和过程增益预设值来预测未来时间的状态变量值。 增益调度滑动模式控制单元基于未来时间的状态变量值，未来时间的输出偏差，时间常数和未来时间的处理增益的设定值来执行增益调度滑模控制操作 ，以确定对象的操纵变量。

公开(公告)号：US5706102A

公开(公告)日：1998-01-06

申请号：US400814

申请日：1995-03-08

申请人： Takuji Okumura ,  Hideo Azumai ,  Satoshi Iwatsubo

发明人： Takuji Okumura ,  Hideo Azumai ,  Satoshi Iwatsubo

IPC分类号： G06T3/40 ,  G06T5/00 ,  H04N1/393 ,  H04N1/40 ,  H04N1/405 ,  H04N1/00

CPC分类号： H04N1/3935 ,  G06T3/40

摘要： A data managing device according to the present invention processes the same object pixel before and after variable magnification processing, and collectively manages processing data before and after the variable magnification processing by making access to a memory once. In the variable magnification processing before and after which the number of object pixels differs, 1-bit BF data for area separation processing performed before the variable magnification processing and 7-bit produced error data for error diffusion processing performed after the variable magnification processing are mixed, and data composed of a total of 8 bits which is obtained by the mixing is read out/written from and to the same address in a SRAM 4 at the same access timing. Therefore, at the time of reduction processing, a reduction processing control signal SMWAIT is produced, and error diffusion processing is stopped when the signal is at a high level.

摘要翻译： 根据本发明的数据管理装置在可变放大处理之前和之后处理相同的对象像素，并且通过访问存储器一次来共同管理可变放大处理之前和之后的处理数据。 在可变倍率处理之前，目标像素的数量不同，在可变倍率处理之前执行的用于区域分离处理的1位BF数据和在可变倍率处理之后执行的用于误差扩散处理的7位产生误差数据混合 ，并且通过混合获得的总共8位组成的数据在SRAM 4中以相同的访问定时被读出/写入同一地址。 因此，在缩小处理时，产生缩小处理控制信号SMWAIT，当信号为高电平时，停止误差扩散处理。

公开(公告)号：US5659402A

公开(公告)日：1997-08-19

申请号：US367846

申请日：1995-01-03

申请人： Hiroyuki Fujita ,  Ariyoshi Hikosaka ,  Tetsuji Kajitani ,  Hidemitsu Hirano ,  Takuji Okumura ,  Tsukasa Matsushita ,  Hideo Azumai ,  Satoshi Iwatsubo

发明人： Hiroyuki Fujita ,  Ariyoshi Hikosaka ,  Tetsuji Kajitani ,  Hidemitsu Hirano ,  Takuji Okumura ,  Tsukasa Matsushita ,  Hideo Azumai ,  Satoshi Iwatsubo

IPC分类号： H04N1/40

CPC分类号： H04N1/40062

摘要： In accordance with the present invention, a quadratic differential values is first calculated, based on differences in the density data between an object pixel and respective peripheral pixels around the object pixel. The square value SS of the quadratic differential value S and the sum .SIGMA.SS obtained by adding up the square values SS of quadratic differential values for continuous five pixels are employed as determination values (step n1). The square sum .SIGMA.SS is compared with respective threshold values a, b and d, and the square value SS is compared with respective threshold values c, e and f (steps n2 to n6 and n8). Based on these comparison results, it is judged which image area among a character image area, gray-scale image area and dotted image area the object pixel belongs to. As for the image area judgement concerning the dotted image area, the final judgement that the object pixel belongs to the dotted image area is made only when nine continuous pixels including the object pixel are all judged to belong to the dotted image area. Since the square values SS and square sum .SIGMA.SS take only a positive value, the threshold values are set only in a positive range, and hence the image processing can be simplified. Further, by employing the square sum .SIGMA.SS, the states of the peripheral pixels can be taken into consideration for the image area judgement.

摘要翻译： 根据本发明，首先基于对象像素与对象像素周围的相应周边像素之间的浓度数据的差异，首先计算二次微分值。 采用二次微分值S的平方值SS和通过将连续5个像素的二次微分值的平方值SS相加得到的总和SIGMA SS作为确定值（步骤n1）。 将平方和SIGMA SS与相应的阈值a，b和d进行比较，并将平方值SS与相应的阈值c，e和f进行比较（步骤n2至n6和n8）。 基于这些比较结果，判断对象像素所属的字符图像区域，灰度图像区域和虚线图像区域中的哪个图像区域。 对于关于虚线图像区域的图像区域判断，仅当包括对象像素的九个连续像素都被判断为属于虚线图像区域时，仅进行对象像素属于虚线图像区域的最终判断。 由于平方值SS和平方和SIGMA SS仅取正值，所以仅在正的范围内设定阈值，因此能够简化图像处理。 此外，通过采用平方和SIGMA SS，可以考虑周边像素的状态用于图像区域判断。

公开(公告)号：US5331342A

公开(公告)日：1994-07-19

申请号：US845656

申请日：1992-03-04

申请人： Akira Shimatani ,  Takuji Okumura

发明人： Akira Shimatani ,  Takuji Okumura

IPC分类号： B41J2/44 ,  G02B26/10 ,  G03G15/04 ,  H04N1/053 ,  H04N1/113 ,  B41J2/435 ,  H04N1/21

CPC分类号： H04N1/053 ,  H04N2201/0471 ,  H04N2201/04784

摘要： A basic clock generated from a crystal oscillator is delayed by a constant time in each of a plurality of delay elements connected in series. Consequently, internal clocks which differ in phase by a predetermined amount are outputted from the delay elements. Output signals of the delay elements are inputted to a clock selector. The clock selector selects any one of the internal clocks on the basis of a beam detection signal indicating the timing of the scanning of a photoreceptor by a laser beam to output the same as a video clock. The clock selector selects any one internal clock whose phase difference from the beam detection signal is closest to a predetermined phase difference out of the internal clocks, the phase difference from the beam detection signal meaning the time difference between the time when the beam detection signal has a predetermined phase angle and the time when the internal clock has a predetermined phase angle. A horizontal synchronizing signal is generated by counting a video clock at the timing based on the beam detection signal. The video clock outputted from the clock selector is synchronized with the beam detection signal with high precision. As a result, the horizontal synchronizing signal generated can be synchronized with the beam detection signal with high precision.

摘要翻译： 在串联连接的多个延迟元件的每一个中，从晶体振荡器产生的基本时钟被延迟恒定时间。 因此，从延迟元件输出相位相差预定量的内部时钟。 延迟元件的输出信号被输入到时钟选择器。 时钟选择器基于通过激光束指示感光体的扫描的定时的光束检测信号来选择任一个内部时钟，以将其作为视频时钟输出。 时钟选择器选择与波束检测信号的相位差最接近于内部时钟的预定相位差的任何一个内部时钟，与波束检测信号的相位差意味着波束检测信号具有的时间之间的时间差 预定的相位角和内部时钟具有预定相位角的时间。 通过在基于光束检测信号的定时对视频时钟进行计数来产生水平同步信号。 从时钟选择器输出的视频时钟与光束检测信号高精度同步。 结果，所生成的水平同步信号可以与光束检测信号以高精度同步。

公开(公告)号：US5237821A

公开(公告)日：1993-08-24

申请号：US795271

申请日：1991-11-20

申请人： Takuji Okumura ,  Masao Yamashita

发明人： Takuji Okumura ,  Masao Yamashita

IPC分类号： F25B21/02 ,  H01L35/32

CPC分类号： F25B21/02 ,  H01L35/325

摘要： A multistep electronic cooler developed for the purpose of minimizing the incoming heat quantity generated by convective heat transfer and radiant heat transfer with a simple structure and bringing the maximum achievable cooling temperature to a level lower than that in a conventional electronic cooler of this kind at a low cost. The multistep electronic cooler according to the present invention has a plurality of base plates (3) arranged as cooling plates in tiers within a vacuum container (5), a plurality of pairs of semiconductors (2) arranged between the base plates via a plurality of electrodes (4) bonded to the base plates, and one layer, at least, or more of heat shielding members (7a, 7b, 7c) covering spaces above the base plates (3). The surfaces of the parts assembled to form the multistep electronic cooler are coated with a substance having a low thermal emissivity, for example, gold.

摘要翻译： 开发了一种多级电子冷却器，其目的是通过简单的结构将对流热传递和辐射热传递产生的进入热量最小化，并将最大可实现的冷却温度降至比常规电子式冷却器低的水平 低成本。 根据本发明的多级电子冷却器具有在真空容器（5）内设置为冷却板的多个基板（3），多对半导体（2）经由多个 与基板接合的电极（4），以及覆盖基板（3）上方的空间的一层，至少或更多个隔热部件（7a，7b，7c）。 组装成多级电子冷却器的部件的表面涂覆有具有低热辐射率的物质，例如金。

公开(公告)号：US4764212A

公开(公告)日：1988-08-16

申请号：US16265

申请日：1987-02-19

申请人： Takuji Okumura

发明人： Takuji Okumura

IPC分类号： C22C1/00 ,  C22C12/00 ,  H01L35/16 ,  B22F1/00

CPC分类号： C22C12/00 ,  C22C1/00 ,  H01L35/16 ,  Y10S420/903

摘要： This invention relates to a method of manufacturing thermoelectric material which has the steps of quenching a thermoelectric alloy in a molten state at a quenching rate higher than 10.sup.3 .degree. C./sec into a membrane or powdery form and subjecting the membrane or powder to cold-forming or sintering. The thermoelectric alloy is a Bi--Sb series alloy having a composition represented by{(Bi.sub.100-x .multidot.Sb.sub.x).sub.100-y .multidot.E.sup.II.sub.y }.sub.100-z .multidot.E.sup.I.sub.zwhere E.sup.I represents a group III or group IV element, E.sup.II represents a group IV or group VI element, x represents a number of 5-20, y represents an integer of 0-20 and z represents a number of 0.05-10, respectively.

摘要翻译： 本发明涉及一种制造热电材料的方法，该方法具有如下步骤：以高于103℃/秒的淬火速率将熔融状态的热电合金淬火成膜或粉末状，并使膜或粉末冷却， 成型或烧结。 该热电合金是具有由{（Bi100-xxSbx）100-yxEIIy} 100-zxEIz表示的组成的Bi-Sb系合金，其中EI表示III族或IV族元素，EII表示IV族或VI族元素，x 表示5-20的数，y表示0-20的整数，z表示数为0.05-10。