公开(公告)号：US08748792B2

公开(公告)日：2014-06-10

申请号：US13241934

申请日：2011-09-23

申请人： Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda ,  Takeshi Yonekura

发明人： Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda ,  Takeshi Yonekura

IPC分类号： H01L27/00

CPC分类号： H01L27/1461 ,  H01L27/14692

摘要： A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.

摘要翻译： 光传感器包括由金属膜形成的下电极，设置在下电极上的非晶硅膜，设置在非晶硅膜上的n型非晶硅膜，设置在n型非晶硅膜上的上电极 并且接收第一参考电压，连接在下电极和第二参考电压之间的电容元件，在导通状态下向下电极输入第一电源电压并将下电极置于浮置状态的开关电路 处于断开状态的检测电路，以及检测电路，其在开关电路导通时用光照射给定期间的非晶硅膜后，检测下部电极的电压变化。

公开(公告)号：US20120074297A1

公开(公告)日：2012-03-29

申请号：US13239754

申请日：2011-09-22

申请人： Takeshi YONEKURA ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda

发明人： Takeshi YONEKURA ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda

IPC分类号： H01L31/028 ,  H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/1461 ,  H01L31/08 ,  H01L31/103

摘要： A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.

摘要翻译： 光传感器阵列包括多个光电传感器像素。 每个光传感器像素包括下电极，非晶硅膜，n型非晶硅膜和上电极。 光传感器阵列包括连接到上电极的多个扫描线，连接到下电极的多个读取线，连接到多个扫描线的扫描电路，并且将扫描线顺序地提供给各扫描线的第一电压的选择扫描信号 第一单元，在一个水平扫描周期的消隐期间，将多个读取行的第二电压输入到多个读取行，之后将多条读取线置于浮置状态，第二单元输出电压变化 在一个水平扫描周期内的每个读取行中，作为光电传感器像素的传感器输出电压。

公开(公告)号：US08963064B2

公开(公告)日：2015-02-24

申请号：US13239754

申请日：2011-09-22

申请人： Takeshi Yonekura ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda

发明人： Takeshi Yonekura ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/08 ,  H01L31/103

CPC分类号： H01L27/14649 ,  H01L27/1461 ,  H01L31/08 ,  H01L31/103

摘要： A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.

摘要翻译： 光传感器阵列包括多个光电传感器像素。 每个光传感器像素包括下电极，非晶硅膜，n型非晶硅膜和上电极。 光传感器阵列包括连接到上电极的多个扫描线，连接到下电极的多个读取线，连接到多个扫描线的扫描电路，并且将扫描线顺序地提供给各扫描线的第一电压的选择扫描信号 第一单元，在一个水平扫描周期的消隐期间，将多个读取行的第二电压输入到多个读取行，之后将多条读取线置于浮置状态，第二单元输出电压变化 在一个水平扫描周期内的每个读取行中，作为光电传感器像素的传感器输出电压。

公开(公告)号：US20120074406A1

公开(公告)日：2012-03-29

申请号：US13242117

申请日：2011-09-23

申请人： Terunori Saitou ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Takeshi Yonekura

发明人： Terunori Saitou ,  Toshio Miyazawa ,  Atsushi Hasegawa ,  Takeshi Yonekura

IPC分类号： H01L31/0376 ,  H01L31/12

CPC分类号： G06F1/1684 ,  G06F21/32 ,  G06K9/00033 ,  G06K2009/00932

摘要： A photosensor includes a photosensor array in which plural photosensor pixels are arranged in a matrix form and a backlight arranged below the photosensor array. The photosensor array includes a surface light-shielding film (for example, Al film), and the surface light-shielding film includes an incident hole through which light from an opposite side to the backlight is incident on the respective photosensor pixels, and a passage hole which is provided around the incident hole and irradiates the opposite side with irradiation light from the backlight.

摘要翻译： 光传感器包括其中多个光电传感器像素以矩阵形式布置的光电传感器阵列和布置在光电传感器阵列下方的背光。 光传感器阵列包括表面光屏蔽膜（例如，Al膜），并且表面光屏蔽膜包括入射孔，来自相对于背光的光入射到相应的光传感器像素上，并且通过 孔设置在入射孔周围，并从背光照射相对侧的照射光。

公开(公告)号：US20120074298A1

公开(公告)日：2012-03-29

申请号：US13241934

申请日：2011-09-23

申请人： Toshio MIYAZAWA ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda ,  Takeshi Yonekura

发明人： Toshio MIYAZAWA ,  Atsushi Hasegawa ,  Terunori Saitou ,  Kozo Yasuda ,  Takeshi Yonekura

IPC分类号： H01L27/146 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/0224

CPC分类号： H01L27/1461 ,  H01L27/14692

摘要： A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.

摘要翻译： 光传感器包括由金属膜形成的下电极，设置在下电极上的非晶硅膜，设置在非晶硅膜上的n型非晶硅膜，设置在n型非晶硅膜上的上电极 并且接收第一参考电压，连接在下电极和第二参考电压之间的电容元件，在导通状态下向下电极输入第一电源电压并将下电极置于浮置状态的开关电路 处于断开状态的检测电路，以及检测电路，其在开关电路导通时用光照射给定期间的非晶硅膜后，检测下部电极的电压变化。

公开(公告)号：US06744779B1

公开(公告)日：2004-06-01

申请号：US09412616

申请日：1999-10-06

申请人： Masashi Yamaguchi ,  Takahiro Yamada ,  Tomonori Kumagai ,  Seiya Yamazaki ,  Takeshi Yonekura

发明人： Masashi Yamaguchi ,  Takahiro Yamada ,  Tomonori Kumagai ,  Seiya Yamazaki ,  Takeshi Yonekura

IPC分类号： H04L12403

CPC分类号： G06F13/4081

摘要： The data processing system includes I/O units for transmitting and receiving data, control units for processing the data, and a common bus unit including a common bus. Function cards in each unit are daisy-chained to I/O buses having characteristics to support hot-swapping, and both ends of the I/O buses are terminated with resistors respectively. The units are daisy-chained to the common bus, and both ends of the common bus are terminated with resistors respectively. Drivers/receivers drive each bus to transmit and receive data between the common bus and the I/O buses.

摘要翻译： 数据处理系统包括用于发送和接收数据的I / O单元，用于处理数据的控制单元和包括公共总线的公共总线单元。 每个单元中的功能卡被菊花链连接到具有支持热插拔特性的I / O总线，并且I / O总线的两端分别由电阻端接。 这些单元被菊花链连接到公共总线，公共总线的两端分别由电阻端接。 驱动器/接收器驱动每个总线在公共总线和I / O总线之间传输和接收数据。