-
公开(公告)号：US08748792B2
公开(公告)日：2014-06-10
申请号：US13241934
申请日：2011-09-23
IPC分类号： H01L27/00
CPC分类号： H01L27/1461 , H01L27/14692
摘要： A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.
摘要翻译： 光传感器包括由金属膜形成的下电极，设置在下电极上的非晶硅膜，设置在非晶硅膜上的n型非晶硅膜，设置在n型非晶硅膜上的上电极 并且接收第一参考电压，连接在下电极和第二参考电压之间的电容元件，在导通状态下向下电极输入第一电源电压并将下电极置于浮置状态的开关电路 处于断开状态的检测电路，以及检测电路，其在开关电路导通时用光照射给定期间的非晶硅膜后，检测下部电极的电压变化。
-
公开(公告)号：US20120074297A1
公开(公告)日：2012-03-29
申请号：US13239754
申请日：2011-09-22
IPC分类号： H01L31/028 , H01L27/146
CPC分类号： H01L27/14649 , H01L27/1461 , H01L31/08 , H01L31/103
摘要： A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.
摘要翻译： 光传感器阵列包括多个光电传感器像素。 每个光传感器像素包括下电极，非晶硅膜，n型非晶硅膜和上电极。 光传感器阵列包括连接到上电极的多个扫描线，连接到下电极的多个读取线，连接到多个扫描线的扫描电路，并且将扫描线顺序地提供给各扫描线的第一电压的选择扫描信号 第一单元，在一个水平扫描周期的消隐期间，将多个读取行的第二电压输入到多个读取行，之后将多条读取线置于浮置状态，第二单元输出电压变化 在一个水平扫描周期内的每个读取行中，作为光电传感器像素的传感器输出电压。
-
3.发明授权Photosensor having upper and lower electrodes with amorphous silicon film and n-type amorphous silicon film therebetween and photosensor array 有权光电传感器具有具有非晶硅膜的上电极和下电极以及其间的n型非晶硅膜和光电传感器阵列公开(公告)号：US08963064B2
公开(公告)日：2015-02-24
申请号：US13239754
申请日：2011-09-22
IPC分类号： H01L27/00 , H01L27/146 , H01L31/08 , H01L31/103
CPC分类号： H01L27/14649 , H01L27/1461 , H01L31/08 , H01L31/103
摘要： A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.
摘要翻译： 光传感器阵列包括多个光电传感器像素。 每个光传感器像素包括下电极，非晶硅膜，n型非晶硅膜和上电极。 光传感器阵列包括连接到上电极的多个扫描线，连接到下电极的多个读取线，连接到多个扫描线的扫描电路，并且将扫描线顺序地提供给各扫描线的第一电压的选择扫描信号 第一单元，在一个水平扫描周期的消隐期间，将多个读取行的第二电压输入到多个读取行，之后将多条读取线置于浮置状态，第二单元输出电压变化 在一个水平扫描周期内的每个读取行中，作为光电传感器像素的传感器输出电压。
-
公开(公告)号：US20120074298A1
公开(公告)日：2012-03-29
申请号：US13241934
申请日：2011-09-23
IPC分类号： H01L27/146 , H01L31/028 , H01L31/0376 , H01L31/0224
CPC分类号： H01L27/1461 , H01L27/14692
摘要： A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.
摘要翻译： 光传感器包括由金属膜形成的下电极，设置在下电极上的非晶硅膜，设置在非晶硅膜上的n型非晶硅膜，设置在n型非晶硅膜上的上电极 并且接收第一参考电压，连接在下电极和第二参考电压之间的电容元件，在导通状态下向下电极输入第一电源电压并将下电极置于浮置状态的开关电路 处于断开状态的检测电路，以及检测电路，其在开关电路导通时用光照射给定期间的非晶硅膜后，检测下部电极的电压变化。
-
公开(公告)号：US20120074406A1
公开(公告)日：2012-03-29
申请号：US13242117
申请日：2011-09-23
IPC分类号： H01L31/0376 , H01L31/12
CPC分类号： G06F1/1684 , G06F21/32 , G06K9/00033 , G06K2009/00932
摘要： A photosensor includes a photosensor array in which plural photosensor pixels are arranged in a matrix form and a backlight arranged below the photosensor array. The photosensor array includes a surface light-shielding film (for example, Al film), and the surface light-shielding film includes an incident hole through which light from an opposite side to the backlight is incident on the respective photosensor pixels, and a passage hole which is provided around the incident hole and irradiates the opposite side with irradiation light from the backlight.
摘要翻译： 光传感器包括其中多个光电传感器像素以矩阵形式布置的光电传感器阵列和布置在光电传感器阵列下方的背光。 光传感器阵列包括表面光屏蔽膜（例如，Al膜），并且表面光屏蔽膜包括入射孔，来自相对于背光的光入射到相应的光传感器像素上，并且通过 孔设置在入射孔周围，并从背光照射相对侧的照射光。
-
公开(公告)号：US08169424B2
公开(公告)日：2012-05-01
申请号：US12127242
申请日：2008-05-27
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括以稳定的方式操作并且可以扩大设计自由度的动态无比移位寄存器。 在具有在基板表面上由p-Si制成的半导体层的薄膜晶体管的动态无量纲移位寄存器中，成为浮置状态的节点通过电容元件连接到固定电位。
-
公开(公告)号：US20100245739A1
公开(公告)日：2010-09-30
申请号：US12794986
申请日：2010-06-07
申请人： Atsushi Hasegawa , Toshio Miyazawa
发明人： Atsushi Hasegawa , Toshio Miyazawa
IPC分类号： G02F1/1335
CPC分类号： G02F1/134363 , G02F1/133555
摘要： The present invention provides a liquid crystal display device which can reduce the difference in brightness between an image obtained from a reflection region and an image obtained from a transmission region. The liquid crystal display device includes a pixel electrode and a counter electrode in each pixel region on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other with liquid crystal therebetween. The pixel region includes a transmission region and a reflection region. A gap between the pixel electrode and the counter electrode in the reflection region is set larger than the gap between the pixel electrode and the counter electrode in the transmission region.
摘要翻译： 本发明提供一种能够减少从反射区域获得的图像与从透射区域获得的图像之间的亮度差异的液晶显示装置。 液晶显示装置在各基板的一个基板的液晶侧表面的各像素区域中具有像素电极和对置电极，它们之间以液晶相互配置。 像素区域包括透射区域和反射区域。 反射区域中的像素电极和对置电极之间的间隙被设定为大于透射区域中的像素电极和对电极之间的间隙。
-
公开(公告)号：US20050285113A1
公开(公告)日：2005-12-29
申请号：US11134381
申请日：2005-05-23
申请人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
发明人： Toshio Miyazawa , Kazutaka Goto , Atsushi Hasegawa
IPC分类号： G09G3/36 , H01L29/04 , H03K19/003
CPC分类号： H03K19/00315 , G09G3/3677 , G09G3/3688
摘要： The present invention provides a display device which can achieve the high breakdown voltage proof property, the enhancement of reliability or the expansion of the designing/process tolerance of transistors by the improvement of a circuit. A display device includes a plurality of pixels and a drive circuit which drives the plurality of pixels. The drive circuit includes a p-type first transistor which has a first electrode thereof connected to a first power source line to which a reference voltage V1 is applied, a p-type second transistor which has a first electrode thereof connected to a second electrode of the first transistor and a second electrode thereof connected to an output terminal thereof, an n-type third transistor which has a first electrode thereof connected to a second power source line to which a reference voltage V2 is applied, and an n-type fourth transistor which has a first electrode thereof connected to a second electrode of the third transistor and a second electrode thereof connected to an output terminal thereof. A first bias voltage Vcp is applied to a control electrode of the second transistor and a second bias voltage Vcn is applied to a control electrode of the fourth transistor. Further, a relationship V2
摘要翻译： 本发明提供了一种可以通过改进电路实现高耐击穿电压性能，提高可靠性或扩大晶体管的设计/工艺容差的显示装置。 显示装置包括多个像素和驱动多个像素的驱动电路。 驱动电路包括：p型第一晶体管，其具有连接到施加了参考电压V1的第一电源线的第一电极; p型第二晶体管，其第一电极连接到第二电极 连接到其输出端的第一晶体管和第二电极，具有连接到施加了参考电压V2的第二电源线的第一电极的n型第三晶体管和n型第四晶体管 其第一电极连接到第三晶体管的第二电极，第二电极连接到第三晶体管的输出端。 第一偏置电压Vcp被施加到第二晶体管的控制电极，第二偏置电压Vcn被施加到第四晶体管的控制电极。 此外，满足关系V2
-
公开(公告)号：US08643636B2
公开(公告)日：2014-02-04
申请号：US13723848
申请日：2012-12-21
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A driving circuit for driving a display panel includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
-
公开(公告)号：US08363047B2
公开(公告)日：2013-01-29
申请号：US13437237
申请日：2012-04-02
IPC分类号： G09G5/00
CPC分类号： G09G3/3677 , G09G3/36 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G3/3696 , G09G5/39 , G09G2300/0408 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28 , H01L27/12 , H01L27/124 , H01L29/42384
摘要： A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
摘要翻译： 显示装置包括以稳定的方式操作并且可以扩大设计自由度的动态无比移位寄存器。 在具有在衬底表面上由p-Si制成的半导体层的薄膜晶体管的动态无量纲移位寄存器中，通过电容元件将成为浮置状态的节点连接到固定电位。
-
-
-
-
-
-
-
-
-
搜索结果
140 条记录 (耗时 0.035 秒)
