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公开(公告)号:US08536673B2
公开(公告)日:2013-09-17
申请号:US13092578
申请日:2011-04-22
Applicant: Fumiyasu Utsunomiya , Taro Yamasaki , Isamu Fujii
Inventor: Fumiyasu Utsunomiya , Taro Yamasaki , Isamu Fujii
IPC: H01L27/146 , H01L31/062
Abstract: Provided is a light receiving circuit for detecting a change in amount of light, in which an input circuit at a subsequent stage is compact and inexpensive and current consumption is low. The light receiving circuit includes: a photoelectric conversion element for supplying a current corresponding to an amount of incident light; an N-channel MOS transistor including a drain supplied with the current from the photoelectric conversion element; and a control circuit for controlling a gate voltage of the NMOS transistor via a low pass filter so that a drain voltage of the N-channel MOS transistor becomes a desired voltage. The control circuit outputs a control state output signal, which is a GND terminal voltage when a delay amount of control on the gate voltage of the NMOS transistor performed via the low pass filter is less than a desired delay amount, and is the drain voltage of the NMOS transistor when the delay amount of control on the gate voltage of the NMOS transistor performed via the low pass filter is the desired delay amount or more. The light receiving circuit outputs the control state output signal as an output signal.
Abstract translation: 提供了一种用于检测光量变化的光接收电路,其中后级的输入电路紧凑且便宜并且电流消耗低。 光接收电路包括:光电转换元件,用于提供对应于入射光量的电流; 包括提供有来自光电转换元件的电流的漏极的N沟道MOS晶体管; 以及控制电路,用于经由低通滤波器控制NMOS晶体管的栅极电压,使得N沟道MOS晶体管的漏极电压成为期望的电压。 当通过低通滤波器执行的NMOS晶体管的栅极电压的延迟控制量小于期望的延迟量时,控制电路输出作为GND端子电压的控制状态输出信号,并且是漏极电压 当通过低通滤波器执行的NMOS晶体管的栅极电压的延迟控制量是期望的延迟量或更大时,NMOS晶体管。 光接收电路输出控制状态输出信号作为输出信号。
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公开(公告)号:US20110272749A1
公开(公告)日:2011-11-10
申请号:US13092578
申请日:2011-04-22
Applicant: Fumiyasu UTSUNOMIYA , Taro YAMASAKI , Isamu FUJII
Inventor: Fumiyasu UTSUNOMIYA , Taro YAMASAKI , Isamu FUJII
IPC: H01L31/113
Abstract: Provided is a light receiving circuit for detecting a change in amount of light, in which an input circuit at a subsequent stage is compact and inexpensive and current consumption is low. The light receiving circuit includes: a photoelectric conversion element for supplying a current corresponding to an amount of incident light; an N-channel MOS transistor including a drain supplied with the current from the photoelectric conversion element; and a control circuit for controlling a gate voltage of the NMOS transistor via a low pass filter so that a drain voltage of the N-channel MOS transistor becomes a desired voltage. The control circuit outputs a control state output signal, which is a GND terminal voltage when a delay amount of control on the gate voltage of the NMOS transistor performed via the low pass filter is less than a desired delay amount, and is the drain voltage of the NMOS transistor when the delay amount of control on the gate voltage of the NMOS transistor performed via the low pass filter is the desired delay amount or more. The light receiving circuit outputs the control state output signal as an output signal.
Abstract translation: 提供了一种用于检测光量变化的光接收电路,其中后级的输入电路紧凑且便宜并且电流消耗低。 光接收电路包括:光电转换元件,用于提供对应于入射光量的电流; 包括提供有来自光电转换元件的电流的漏极的N沟道MOS晶体管; 以及控制电路,用于经由低通滤波器控制NMOS晶体管的栅极电压,使得N沟道MOS晶体管的漏极电压成为期望的电压。 当通过低通滤波器执行的NMOS晶体管的栅极电压的延迟控制量小于期望的延迟量时,控制电路输出作为GND端子电压的控制状态输出信号,并且是漏极电压 当通过低通滤波器执行的NMOS晶体管的栅极电压的延迟控制量是期望的延迟量或更大时,NMOS晶体管。 光接收电路输出控制状态输出信号作为输出信号。
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公开(公告)号:US08791686B2
公开(公告)日:2014-07-29
申请号:US13609944
申请日:2012-09-11
Applicant: Taro Yamasaki , Fumiyasu Utsunomiya
Inventor: Taro Yamasaki , Fumiyasu Utsunomiya
CPC classification number: G05F3/262
Abstract: The voltage reference circuit includes: a first MOS transistor; a second MOS transistor including a gate terminal connected to a gate terminal of the first MOS transistor and having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value and a K value of the first MOS transistor; a current mirror circuit flowing a current based on a difference between the absolute values of the threshold values of the first MOS transistor and the second MOS transistor; a third MOS transistor flowing the current; and a fourth MOS transistor having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value of the third MOS transistor and flowing the current.
Abstract translation: 所述电压基准电路包括:第一MOS晶体管; 第二MOS晶体管,包括连接到第一MOS晶体管的栅极端子并具有阈值的绝对值和高于阈值的绝对值和第一MOS晶体管的K值的K值的栅极端子; 基于第一MOS晶体管和第二MOS晶体管的阈值的绝对值之间的差异流动电流的电流镜像电路; 流过电流的第三MOS晶体管; 以及第四MOS晶体管,其绝对值为阈值,K值高于第三MOS晶体管的阈值的绝对值并使电流流动。
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公开(公告)号:US20110234302A1
公开(公告)日:2011-09-29
申请号:US13069831
申请日:2011-03-23
Applicant: Fumiyasu UTSUNOMIYA , Taro YAMASAKI , Isamu FUJII
Inventor: Fumiyasu UTSUNOMIYA , Taro YAMASAKI , Isamu FUJII
IPC: H03K17/785 , H03K17/78
CPC classification number: H03K17/941 , H03K17/9627 , H03K2217/94106 , H03K2217/96058
Abstract: Provided is a proximity sensor using a photosensor, which is easy to use and reduced in power consumption. In the proximity sensor, a first photosensor is used to detect a change in amount of ambient light entering the first photosensor, which is caused when a finger is coming close thereto, and a detection signal is output based on a result of the detection. The photosensor includes, for example, one or a plurality of PN junction elements connected in parallel.
Abstract translation: 提供了一种使用光电传感器的接近传感器,其易于使用并降低功耗。 在接近传感器中,使用第一光电传感器来检测当手指靠近其时引起的进入第一光传感器的环境光的变化,并且基于检测结果输出检测信号。 光传感器包括例如并联连接的一个或多个PN结元件。
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公开(公告)号:US08748790B2
公开(公告)日:2014-06-10
申请号:US13069831
申请日:2011-03-23
Applicant: Fumiyasu Utsunomiya , Taro Yamasaki , Isamu Fujii
Inventor: Fumiyasu Utsunomiya , Taro Yamasaki , Isamu Fujii
IPC: H01L27/00 , H01L31/00 , H04N7/18 , G03B17/00 , H01L27/088
CPC classification number: H03K17/941 , H03K17/9627 , H03K2217/94106 , H03K2217/96058
Abstract: Provided is a proximity sensor using a photosensor, which is easy to use and reduced in power consumption. In the proximity sensor, a first photosensor is used to detect a change in amount of ambient light entering the first photosensor, which is caused when a finger is coming close thereto, and a detection signal is output based on a result of the detection. The photosensor includes, for example, one or a plurality of PN junction elements connected in parallel.
Abstract translation: 提供了一种使用光电传感器的接近传感器,其易于使用并降低功耗。 在接近传感器中,使用第一光电传感器来检测当手指靠近其时引起的进入第一光传感器的环境光的变化,并且基于检测结果输出检测信号。 光传感器包括例如并联连接的一个或多个PN结元件。
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公开(公告)号:US20130076331A1
公开(公告)日:2013-03-28
申请号:US13609944
申请日:2012-09-11
Applicant: Taro YAMASAKI , Fumiyasu UTSUNOMIYA
Inventor: Taro YAMASAKI , Fumiyasu UTSUNOMIYA
IPC: G05F3/16
CPC classification number: G05F3/262
Abstract: The voltage reference circuit includes: a first MOS transistor; a second MOS transistor including a gate terminal connected to a gate terminal of the first MOS transistor and having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value and a K value of the first MOS transistor; a current mirror circuit flowing a current based on a difference between the absolute values of the threshold values of the first MOS transistor and the second MOS transistor; a third MOS transistor flowing the current; and a fourth MOS transistor having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value of the third MOS transistor and flowing the current.
Abstract translation: 所述电压基准电路包括:第一MOS晶体管; 第二MOS晶体管,包括连接到第一MOS晶体管的栅极端子并具有阈值的绝对值和高于阈值的绝对值和第一MOS晶体管的K值的K值的栅极端子; 基于第一MOS晶体管和第二MOS晶体管的阈值的绝对值之间的差异流动电流的电流镜像电路; 流过电流的第三MOS晶体管; 以及第四MOS晶体管,其绝对值为阈值,K值高于第三MOS晶体管的阈值的绝对值并使电流流动。
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公开(公告)号:US20110109364A1
公开(公告)日:2011-05-12
申请号:US12943697
申请日:2010-11-10
Applicant: Taro Yamasaki , Fumiyasu Utsunomiya
Inventor: Taro Yamasaki , Fumiyasu Utsunomiya
IPC: H03K3/00
CPC classification number: H03K19/00384 , H03K3/011 , H03K3/3565
Abstract: Provided is an input circuit having hysteresis characteristics that is capable of operating in a wide range of power supply voltage conditions while suppressing power supply voltage dependence of a hysteresis voltage and a response speed. The input circuit is provided with: a circuit for obtaining a small hysteresis voltage under the condition of low power supply voltage (formed of PMOS transistors (101 to 103) and an inverter (501)); and a circuit for obtaining a large hysteresis voltage under the condition of low power supply voltage (formed of PMOS transistors (101 and 104) and the inverter (501)).
Abstract translation: 提供一种具有滞后特性的输入电路,其能够在抑制滞后电压和响应速度的电源电压依赖性的同时在宽的电源电压条件范围内工作。 输入电路具有:在低电源电压(由PMOS晶体管(101〜103)和逆变器(501)形成)的条件下获得小的滞后电压的电路; 以及在低电源电压(由PMOS晶体管(101和104和逆变器(501)形成)的条件下获得大的滞后电压的电路。
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公开(公告)号:US4690553A
公开(公告)日:1987-09-01
申请号:US158901
申请日:1980-06-12
Applicant: Hiroshi Fukamizu , Masaji Nakano , Kunio Iba , Taro Yamasaki , Kenji Sano
Inventor: Hiroshi Fukamizu , Masaji Nakano , Kunio Iba , Taro Yamasaki , Kenji Sano
IPC: G01N21/27 , G01N21/17 , G01N21/35 , G01W1/14 , G08B19/02 , G08G1/09 , G09F7/00 , G01N21/47 , G01N21/55
CPC classification number: G01W1/14 , G06K9/00785 , G09F27/005 , G09F2007/005
Abstract: Road surface condition detection system comprising light projector means for projecting light including the infrared region of the spectrum to a road surface to sense the condition thereof, the infrared having wavelengths at which the reflectance of snow is smaller than that of the road surface in a dry condition, light receiving means for receiving light reflected from the road surface, comparisons means for comparing the output signals generated from the light receiving means with reference signal levels corresponding to dry, wet, snowy and frozen conditions, and judging means for judging the road surface to be one of the conditions in accordance with results of comparison.
Abstract translation: 路面状况检测系统,其包括用于将包括所述光谱的红外区域的光投射到路面以感测其状况的光投射装置,所述红外线具有在干燥时的雪的反射率小于路面的反射率的波长 条件,用于接收从路面反射的光的光接收装置,用于将从光接收装置产生的输出信号与对应于干,湿,雪和冷冻条件的参考信号电平进行比较的比较装置,以及用于判断路面的判断装置 根据比较结果作为条件之一。
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