公开(公告)号：US4464627A

公开(公告)日：1984-08-07

申请号：US259427

申请日：1981-05-01

申请人： Chusuke Munakata ,  Kunihiro Yagi ,  Teruaki Motooka

发明人： Chusuke Munakata ,  Kunihiro Yagi ,  Teruaki Motooka

IPC分类号： G01R31/265 ,  G01R31/26

CPC分类号： G01R31/2656

摘要： A device for measuring semiconductor characteristics, wherein electrodes are installed maintaining a gap on the front and back sides of a semiconductor specimen of which the characteristics are to be measured, at least one of the electrodes being transparent, the surface of the semiconductor specimen is scanned with a pulsed narrow photon beam via the transparent electrode, and a photovoltage generated between the front and back surfaces of the semiconductor specimen is taken out from the two electrodes via the capacitive coupling, in order to observe the distribution of characteristics in the surface of the semiconductor specimen.

摘要翻译： 一种用于测量半导体特性的装置，其中电极被安装成在要测量特性的半导体试样的正面和背面保持间隙，至少一个电极是透明的，半导体试样的表面被扫描 通过透明电极具有脉冲的窄光子束，并且通过电容耦合从两个电极中取出在半导体样品的前表面和后表面之间产生的光电压，以观察表面的特性分布 半导体标本。

公开(公告)号：US4472633A

公开(公告)日：1984-09-18

申请号：US344975

申请日：1982-02-02

申请人： Teruaki Motooka

发明人： Teruaki Motooka

IPC分类号： G01N21/35 ,  G01N21/00 ,  G01N21/21 ,  G01R31/265 ,  H01L21/66

CPC分类号： G01N21/21 ,  G01N21/211 ,  G01R31/2656

摘要： A semiconductor wafer is irradiated with a linearly polarized infrared light beam. On the basis of changes in the polarized state of the light reflected from the wafer, the distribution of the density of carriers depthwise in the wafer is determined. Distribution of the carrier density in the semiconductor wafer can be measured very rapidly in a contactless manner without destroying the wafer.

摘要翻译： 半导体晶片被线偏振红外光束照射。 基于从晶片反射的光的偏振状态的变化，确定晶片深度方向的载流子密度分布。 半导体晶片中载流子密度的分布可以以非接触方式非常迅速地测量，而不破坏晶片。