公开(公告)号：US20080210947A1

公开(公告)日：2008-09-04

申请号：US11824088

申请日：2007-06-29

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US07816711B2

公开(公告)日：2010-10-19

申请号：US11824088

申请日：2007-06-29

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

公开(公告)号：US20080067565A1

公开(公告)日：2008-03-20

申请号：US11981002

申请日：2007-10-30

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

公开(公告)号：US20050116251A1

公开(公告)日：2005-06-02

申请号：US10979707

申请日：2004-11-02

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L29/45

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US07485903B2

公开(公告)日：2009-02-03

申请号：US10979707

申请日：2004-11-02

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L27/148

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

公开(公告)号：US07804116B2

公开(公告)日：2010-09-28

申请号：US11981002

申请日：2007-10-30

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

摘要翻译： 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。