公开(公告)号：US20100118007A1

公开(公告)日：2010-05-13

申请号：US12594910

申请日：2008-04-03

申请人： Tetsuro Hori

发明人： Tetsuro Hori

IPC分类号： G09G3/36 ,  G02F1/133 ,  G09G5/00

CPC分类号： G09G3/3614 ,  G09G3/3629 ,  G09G2310/0235 ,  G09G2320/0252 ,  G09G2320/066 ,  G09G2320/0693 ,  G09G2360/145

摘要： A liquid crystal device comprising, at least, a liquid crystal element comprising at least a pair of substrates and a liquid crystal material disposed between the pair of electrodes, and electric field-applying means for applying an electric field to the liquid crystal element. The electric field-applying means applies a reverse electric field (−TINT) so as to cancel an orientation energy difference (TINT) depending upon relative directions between the applied electric field and aligned liquid crystal molecular axis in the liquid crystal element. There is provided a liquid crystal device capable of effectively suppressing the reduction in contrast, even when the optical response speed is increased.

摘要翻译： 一种液晶装置，至少包括至少包括一对基板和设置在该对电极之间的液晶材料的液晶元件和用于向液晶元件施加电场的电场施加装置。 电场施加装置根据所施加的电场和液晶元件中的取向液晶分子轴之间的相对方向，施加反向电场（-TINT）以消除取向能量差（TINT）。 提供了即使当光学响应速度增加时也能够有效地抑制对比度降低的液晶装置。

公开(公告)号：US06635521B2

公开(公告)日：2003-10-21

申请号：US09277880

申请日：1999-03-29

申请人： Hongyong Zhang ,  Makoto Igarashi ,  Kenichi Yanai ,  Tetsuro Hori ,  Yutaka Takizawa

发明人： Hongyong Zhang ,  Makoto Igarashi ,  Kenichi Yanai ,  Tetsuro Hori ,  Yutaka Takizawa

IPC分类号： H01L218238

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1274

摘要： In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTS) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.

摘要翻译： 在CMOS-TFT的制造中，对p型杂质（B：硼）进行非选择性掺杂（对于p型和n型TFTS两者）和选择性掺杂（仅对于n型TFT），依次进行 以非常低的浓度控制阈值电压（Vthp和Vthn）。 更具体地说，p型和n型TFT的Id-Vg特性最初是负偏移的。 在这种状态下，非选择性地掺杂是首先进行p型和n型TFT移位，以将Vthp调节到规定值。 然后选择性地掺杂以仅仅移动n型TFT以将Vthn调节到指定值。 构成CMOS-TFT的p型和n型TFT的阈值电压可以以高精度独立而有效地（最小光刻）进行控制。