公开(公告)号：US5962873A

公开(公告)日：1999-10-05

申请号：US943054

申请日：1997-10-02

申请人： Michio Ohkubo ,  Tetsuro Ijichi ,  Yoshikazu Ikegami

发明人： Michio Ohkubo ,  Tetsuro Ijichi ,  Yoshikazu Ikegami

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/16 ,  H01L33/00

CPC分类号： H01S5/164 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/3072

摘要： In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets of the semiconductor laser main body and having a band gap greater than the band gap of the active layer,a diffusion blocking layer of, for example, Si, SiN or Ge is formed on the surface of the non-absorbing layer, and a di-electric protective layer of, for example, AlO.sub.x, SiO.sub.x, SiN.sub.x or MgO.sub.x for regulating reflectance at the facets and protecting the non-absorbing layer is formed on the diffusion blocking layer.

摘要翻译： 在包括形成在一对包层之间的有源层的半导体激光器主体和形成在半导体激光器主体的面上并具有大于带的带隙的InGaP的非吸收层的半导体激光器件中， 在非吸收层的表面上形成有源层的间隙，例如Si，SiN或Ge的扩散阻挡层，以及例如AlO x，SiO x，SiN x或 在扩散阻挡层上形成用于调节面的反射率和保护非吸收层的MgOx。

公开(公告)号：US5491711A

公开(公告)日：1996-02-13

申请号：US145835

申请日：1993-11-04

申请人： Ranjit S. Mand ,  Tetsuro Ijichi ,  Jingming Xu

发明人： Ranjit S. Mand ,  Tetsuro Ijichi ,  Jingming Xu

IPC分类号： H01S5/028 ,  H01S5/16 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/164 ,  H01S5/028 ,  H01S5/162 ,  H01S5/32333

摘要： A semiconductor laser device having a body with opposed facets and including an active region with aluminum diffused into the active region along the facets thereof. Adding aluminum to the portions of the active region along the facets increases the bandgap of the active region along the facets and provides a semiconductor laser device having an increased catastrophic optical damage (COD) level. The semiconductor laser device is produced by depositing a thin film of aluminum on the facets of the semiconductor laser device and then heat treating to cause diffusion of the aluminum film or phosphorus into the body of the semiconductor laser device along the facets thereof, thereby changing the composition of the semiconductor laser device body along the facets. Alternatively, phosphorus may be diffused into the body of the semiconductor laser device along the facets thereof.

摘要翻译： 一种半导体激光器件，具有具有相对面并具有铝的有源区的主体沿其小面扩散到有源区中。 沿着刻面向有源区域的部分添加铝增加沿着刻面的有源区的带隙，并提供具有增加的灾难性光学损伤（COD）水平的半导体激光器件。 半导体激光器件通过在半导体激光器件的小面上沉积铝薄膜然后进行热处理以使铝膜或磷沿着其半面扩散到半导体激光器件的主体中而产生，从而改变 半导体激光器件本体沿着刻面的组成。 或者，磷可以沿其小面扩散到半导体激光器件的主体中。

公开(公告)号：US5394424A

公开(公告)日：1995-02-28

申请号：US91719

申请日：1993-07-14

申请人： Tetsuro Ijichi ,  Michinori Irikawa ,  Ranjit S. Mand ,  Jingming Xu

发明人： Tetsuro Ijichi ,  Michinori Irikawa ,  Ranjit S. Mand ,  Jingming Xu

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231

摘要： There is provided a semiconductor laser device capable of emitting a laser beam having stable transverse modes. A ridge type semiconductor laser device comprises an upper clad layer 15 left on its active layer to a thickness (d) between 0.25 and 0.50 m in order to ensure a stable production of fundamental transverse modes for laser operation and a rib-shaped clad layer 16 having a bottom width (W) between 2.0 .mu.m and 3.5 .mu.m and projecting from the upper clad layer in juxtaposition with the light emitting region of the active layer 13. When d and W are found within the respective ranges, the device emits a laser beam having stable transverse modes.

摘要翻译： 提供了能够发射具有稳定的横向模式的激光束的半导体激光装置。 脊型半导体激光器件包括在其有源层上留下的上覆层15至厚度（d）在0.25和0.50μm之间，以确保稳定地产生用于激光器操作的基本横模和肋形覆层16 具有2.0μm和3.5μm之间的底部宽度（W）并且从上部包覆层与有源层13的发光区域并置突出。当在相应的范围内发现d和W时，器件发射 激光束具有稳定的横向模式。