公开(公告)号：US20060065936A1

公开(公告)日：2006-03-30

申请号：US10953894

申请日：2004-09-29

申请人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

发明人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

IPC分类号： H01L21/331 ,  H01L29/76

CPC分类号： H01L29/66272 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0928 ,  H01L29/0821

摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.

公开(公告)号：US20060252215A1

公开(公告)日：2006-11-09

申请号：US11458270

申请日：2006-07-18

申请人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

发明人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

IPC分类号： H01L21/331

CPC分类号： H01L29/66272 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0928 ,  H01L29/0821

摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.