-
公开(公告)号：US20060065936A1
公开(公告)日：2006-03-30
申请号：US10953894
申请日：2004-09-29
申请人： Daniel Kerr , Michael Carroll , Amal Hamad , Thiet Lai , Roger Key
发明人： Daniel Kerr , Michael Carroll , Amal Hamad , Thiet Lai , Roger Key
IPC分类号： H01L21/331 , H01L29/76
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
-
公开(公告)号：US20060252215A1
公开(公告)日：2006-11-09
申请号：US11458270
申请日：2006-07-18
申请人： Daniel Kerr , Michael Carroll , Amal Hamad , Thiet Lai , Roger Key
发明人： Daniel Kerr , Michael Carroll , Amal Hamad , Thiet Lai , Roger Key
IPC分类号： H01L21/331
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L27/0928 , H01L29/0821
摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.
-
公开(公告)号：US20050098852A1
公开(公告)日：2005-05-12
申请号：US10953476
申请日：2004-09-29
申请人： Daniel Kerr , Michael Carroll , Robert Jones , William Russell , Alan Chen
发明人： Daniel Kerr , Michael Carroll , Robert Jones , William Russell , Alan Chen
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/423 , H01L29/49 , H01L29/73 , H01L29/732 , H01L29/737 , H01L29/00
CPC分类号： H01L27/0623 , H01L21/8249 , H01L29/0804 , H01L29/66242 , H01L29/66272 , H01L29/66287 , H01L29/7322 , H01L29/7378
摘要： A process for forming an emitter for a bipolar junction transistor and a bipolar junction transistor formed according to the process. In one embodiment, the bipolar junction transistor comprises in stacked relation a collector, an intrinsic base, an extrinsic base and an emitter. The emitter is formed by defining an opening in material layers forming the extrinsic base and selectively depositing silicon in the opening. The silicon is doped in situ or by an implant process. In another embodiment lacking an extrinsic base the opening is formed in dielectric material layers overlying the intrinsic base.
摘要翻译： 根据该方法形成用于双极结型晶体管和双极结型晶体管的发射极的工艺。 在一个实施例中，双极结型晶体管以堆叠关系包括集电极，本征基极，外部基极和发射极。 通过在形成外部基极的材料层中限定开口并且在开口中选择性地沉积硅来形成发射极。 硅原位或通过注入工艺进行掺杂。 在缺少非本征基底的另一个实施例中，开口形成在覆盖本征基底的介电材料层中。
-
公开(公告)号：US11173943B2
公开(公告)日：2021-11-16
申请号：US16622874
申请日：2018-06-18
摘要： A portable storage sled for transporting equipment includes a first elongated member and a second elongated member. At least one connecting member joins the first elongated member to the second elongated member. Each of the first elongated member and the second elongated member includes an extension member that is selectively retractable and extendable therefrom. The first elongated member, the second elongated member, the first extension member and the second extension member include a plurality of ridges extending upwardly therefrom that form an equipment mount between which the equipment is situated. The portable storage sled is selectively adjustable in length and width so that equipment of various sizes can be situated thereon.
-
公开(公告)号：US09356144B1
公开(公告)日：2016-05-31
申请号：US12854563
申请日：2010-08-11
CPC分类号： H01L29/7841 , H01L27/0255
摘要： The present disclosure relates to gate oxide protection circuits, which are used to protect the gate oxides of field effect transistor (FET) elements from over voltage conditions, particularly during situations in which the gate oxides are particularly vulnerable, such as during certain manufacturing stages. Each gate oxide protection circuit may be coupled to a corresponding FET element through corresponding first and second resistive elements, which are coupled to a corresponding gate connection node and a corresponding first connection node, respectively, of the FET element. The gate connection node and the first connection node are electrically adjacent to opposite sides of the gate oxide of the FET element. Each gate oxide protection circuit may protect its corresponding FET element by limiting a voltage between the gate connection node and the first connection node.
摘要翻译： 本公开涉及栅极氧化物保护电路，其用于保护场效应晶体管（FET）元件的栅极氧化物免受过电压条件，特别是在栅极氧化物特别容易受到影响的情况下，例如在某些制造阶段。 每个栅极氧化物保护电路可以通过对应的第一和第二电阻元件耦合到对应的FET元件，该第一和第二电阻元件分别耦合到FET元件的对应的栅极连接节点和相应的第一连接节点。 栅极连接节点和第一连接节点与FET元件的栅极氧化物的相对侧电气相邻。 每个栅极氧化物保护电路可以通过限制栅极连接节点和第一连接节点之间的电压来保护其对应的FET元件。
-
公开(公告)号：US08076750B1
公开(公告)日：2011-12-13
申请号：US12958494
申请日：2010-12-02
IPC分类号： H01L29/00
CPC分类号： H01L23/645 , H01L23/5227 , H01L23/552 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
-
7.发明授权Linearity improvements of semiconductor substrate based radio frequency devices 有权基于半导体衬底的射频器件的线性改善公开(公告)号：US07868419B1
公开(公告)日：2011-01-11
申请号：US12254499
申请日：2008-10-20
IPC分类号： H01L27/08
CPC分类号： H01L23/645 , H01L23/5227 , H01L23/552 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
摘要翻译： 本发明涉及在半导体衬底上使用诸如多晶硅层的富集层，以基本上以射频（RF）频率固定在半导体衬底的表面处的表面传导层。 富集阱层可具有高密度的陷阱，其将载流子从表面传导层捕获。 来自陷阱的平均释放时间可以比任何现有RF信号的周期长，从而有效地固定表面传导层，这可以基本上防止由于RF信号引起的电容和电感变化。 因此，可以显着地减少或消除RF信号的谐波失真。 半导体衬底可以是硅衬底，砷化镓衬底或另一衬底。
-
公开(公告)号：US20100212138A1
公开(公告)日：2010-08-26
申请号：US12711307
申请日：2010-02-24
申请人： Michael Carroll , Richard Obert , Paul Stemniski
发明人： Michael Carroll , Richard Obert , Paul Stemniski
IPC分类号： B23P11/02
CPC分类号： A61B17/151 , A61B17/154 , A61B17/155 , A61B17/157 , A61B34/10 , A61B2017/0023 , A61B2017/00526 , A61B2017/568 , A61B2034/104 , A61B2034/108 , B29C64/386 , B33Y50/02 , B33Y70/00 , B33Y80/00 , G05B15/02 , G06F17/50 , Y10T29/49 , Y10T29/49863
摘要： A resection guide locator includes a bone engagement portion with surfaces that are complementary to the surface topographies of a bone to be resected during surgery. A housing includes a socket defined by a resilient annular wall that is sized and arranged so to accept a resection guide by press-fit to thereby position and hold the resection guide within the socket. The resection guide is maintained in a predetermined, preferred position while the surfaces are releasably locked in position on the bone. A method is disclosed for forming and using the resection guide locator.
摘要翻译： 切除引导定位器包括具有与在手术期间被切除的骨的表面形貌互补的表面的骨接合部分。 壳体包括由弹性环形壁限定的插座，其尺寸和布置成通过压配合接受切除引导件，从而将切除引导件定位并保持在插座内。 切除引导件保持在预定的优选位置，同时表面可释放地锁定在骨骼上的适当位置。 公开了用于形成和使用切除引导定位器的方法。
-
公开(公告)号：US20070150541A1
公开(公告)日：2007-06-28
申请号：US11318806
申请日：2005-12-27
IPC分类号： G06F15/16
CPC分类号： G06Q10/107 , H04L51/00
摘要： Embodiments of the present invention address deficiencies of the art in respect to inbox management in a messaging system and provide a novel and non-obvious method, system and computer program product for inbox management for threaded message views. In one embodiment, an inbox management method for threaded message views can be provided. The method can include selecting a message in a message list for an inbox, identifying a message thread for the selected message, retrieving all messages for the message thread, and inserting a listing of the retrieved messages for the message thread in the message list.
摘要翻译： 本发明的实施例解决了消息收发系统中的收件箱管理方面的技术缺陷，并且提供了用于线程消息视图的收件箱管理的新颖且非显而易见的方法，系统和计算机程序产品。 在一个实施例中，可以提供用于线程消息视图的收件箱管理方法。 该方法可以包括在收件箱的消息列表中选择消息，识别所选择的消息的消息线索，检索消息线程的所有消息，以及将消息线程的检索到的消息的列表插入到消息列表中。
-
10.发明申请Apparatus for and method of forming concrete and transferring loads between concrete slabs 审中-公开混凝土和混凝土板之间的载荷转移装置和方法公开(公告)号：US20060185316A1
公开(公告)日：2006-08-24
申请号：US11229978
申请日：2005-09-19
IPC分类号： E04B1/00
摘要： An embodiment configured according to principles of the invention includes a plate defining a hexagon having a base parallel with joint between concrete slabs. Another embodiment includes a hexagon-shaped plate having an elastomer-coated first portion and a second portion, and a form having a slot configured to closely receive the second portion. A further embodiment includes a plate having compressive and/or resilient edge banding disposed on a plate edge that is not parallel to the joint. Apparatuses and methods for retro-fitting existing concrete stabs for transferring a load with a new adjacent concrete slab also are disclosed.
摘要翻译： 根据本发明的原理构造的实施例包括限定六边形的板，其具有平行于混凝土板之间的接头的基部。 另一个实施例包括具有弹性体涂覆的第一部分和第二部分的六边形板，以及具有被配置为紧密接收第二部分的狭槽的形式。 另一实施例包括具有设置在不平行于接头的板边缘上的压缩和/或弹性边缘条带的板。 还公开了用于将新的相邻混凝土板转移载荷的现有混凝土桩的装配和方法。
-
-
-
-
-
-
-
-
-
搜索结果
58 条记录 (耗时 0.035 秒)
