公开(公告)号：US20060252215A1

公开(公告)日：2006-11-09

申请号：US11458270

申请日：2006-07-18

申请人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

发明人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

IPC分类号： H01L21/331

CPC分类号： H01L29/66272 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0928 ,  H01L29/0821

摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.

公开(公告)号：US20080102584A1

公开(公告)日：2008-05-01

申请号：US11968693

申请日：2008-01-03

申请人： Daniel Kerr ,  Alan Chen ,  Edward Martin ,  Amal Hamad ,  William Russell

发明人： Daniel Kerr ,  Alan Chen ,  Edward Martin ,  Amal Hamad ,  William Russell

IPC分类号： H01L21/04

CPC分类号： H01L23/3677 ,  H01L2224/48091 ,  H01L2924/01327 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.

摘要翻译： 一种用于半导体集成电路的导热结构及其制造方法。 该结构包括一个或多个垂直和/或水平导热元件，其设置在靠近器件的位置，以改善从器件到集成电路的衬底的导热性。 在一个实施例中，散热器固定到集成电路以用于来自集成电路的热流。 该方法包括在覆盖半导体衬底的材料层中形成开口，其中开口设置在器件附近并延伸到衬底。 在开口中形成导热材料以提供从器件到衬底的热路径。

公开(公告)号：US20060065936A1

公开(公告)日：2006-03-30

申请号：US10953894

申请日：2004-09-29

申请人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

发明人： Daniel Kerr ,  Michael Carroll ,  Amal Hamad ,  Thiet Lai ,  Roger Key

IPC分类号： H01L21/331 ,  H01L29/76

CPC分类号： H01L29/66272 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0928 ,  H01L29/0821

摘要： A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors. According to one embodiment of the present invention, bipolar junction transistors having six different collector dopant densities (and thus six different breakdown characteristics) are formed.

公开(公告)号：US20050167801A1

公开(公告)日：2005-08-04

申请号：US10955238

申请日：2004-09-30

申请人： Daniel Kerr ,  Alan Chen ,  Edward Martin ,  Amal Hamad ,  William Russell

发明人： Daniel Kerr ,  Alan Chen ,  Edward Martin ,  Amal Hamad ,  William Russell

IPC分类号： H01L23/02 ,  H01L23/367

CPC分类号： H01L23/3677 ,  H01L2224/48091 ,  H01L2924/01327 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.

摘要翻译： 一种用于半导体集成电路的导热结构及其制造方法。 该结构包括一个或多个垂直和/或水平导热元件，其设置在靠近器件的位置，以改善从器件到集成电路的衬底的导热性。 在一个实施例中，散热器固定到集成电路以用于来自集成电路的热流。 该方法包括在覆盖半导体衬底的材料层中形成开口，其中开口设置在器件附近并延伸到衬底。 在开口中形成导热材料以提供从器件到衬底的热路径。