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    Low temperature inductive heating of subsurface formations
    1.
    发明授权
    Low temperature inductive heating of subsurface formations 有权
    地下地层低温感应加热

    公开(公告)号：US08875788B2

    公开(公告)日：2014-11-04

    申请号：US13083240

    申请日：2011-04-08

    Applicant: Scott Vinh Nguyen ,  Thomas David Fowler

    Inventor： Scott Vinh Nguyen ,  Thomas David Fowler

    IPC: E21B36/00 ,  E21B43/24

    CPC classification number: E21B43/24 ,  E21B43/2408

    Abstract: Electrical current flow is induced in a ferromagnetic conductor providing time-varying electrical current at a first frequency to an electrical conductor located in a formation. The ferromagnetic conductor at least partially surrounds and at least partially extends lengthwise around the electrical conductor. The ferromagnetic conductor resistively heats up to a first temperature of at most about 300° C. Water in the formation is vaporized with heat at the first temperature. Subsequently, time-varying electrical current at a second frequency is provided to the elongated electrical conductor to induce electrical current flow at the second frequency such that the ferromagnetic conductor resistively heats up to a second temperature above about 300° C. Heat transfers from the ferromagnetic conductor at the second temperature to at least a part of the formation to mobilize at least some hydrocarbons in the part of the formation.

    Abstract translation: 在铁磁导体中感应出电流，该铁磁导体以第一频率向位于地层中的电导体提供时变电流。 铁磁导体至少部分地围绕电导体围绕并至少部分地延伸。 铁磁导体电阻加热到最多约300℃的第一温度。地层中的水在第一温度下被加热蒸发。 随后，将第二频率的时变电流提供给细长电导体以在第二频率处引起电流流动，使得铁磁性导体电阻加热至高于约300℃的第二温度。从铁磁体 导体在第二温度下至至少一部分地层，以在地层的一部分中调动至少一些烃。

    Offset barrier wells in subsurface formations
    2.
    发明授权
    Offset barrier wells in subsurface formations 有权
    地下构造中的偏移屏障井

    公开(公告)号：US08267170B2

    公开(公告)日：2012-09-18

    申请号：US12576790

    申请日：2009-10-09

    Applicant: Thomas David Fowler ,  Billy John McKinzie

    Inventor： Thomas David Fowler ,  Billy John McKinzie

    IPC: E21B36/00 ,  E21B43/24 ,  E21B43/30 ,  E21B47/026 ,  E21B47/10

    CPC classification number: E21B43/24 ,  E21B43/2401 ,  E21B43/2405 ,  E21B44/02 ,  H01C3/00 ,  H05B3/48 ,  H05B2214/03 ,  Y10T29/49083

    Abstract: A plurality of first barrier wells are formed in a formation for a first barrier. A substantially constant spacing separates adjacent first barrier wells. The formation is analyzed to determine the principal fracture direction of at least one layer of the formation. An offset distance of second barrier wells relative to first barrier wells is determined based on the principal fracture direction to limit a maximum separation distance between a closest barrier well and a theoretical fracture extending between the first barrier and the second barrier along the principal fracture direction to a distance of less than one half of the spacing that separates adjacent first barrier wells. The second barrier wells are offset from the first barrier wells by a distance that is at least substantially the same as the offset distance.

    Abstract translation: 在第一阻挡层的形成中形成多个第一势垒阱。 基本上恒定的间隔分离相邻的第一势垒阱。 分析地层以确定地层至少一层的主断裂方向。 基于主要断裂方向来确定第二势垒阱相对于第一势垒阱的偏移距离，以限制最接近的阻挡阱与在主破裂方向上在第一阻挡层和第二阻挡层之间延伸的理论裂缝之间的最大间隔距离， 距离小于分隔相邻的第一势垒井的间隔的一半的距离。 第二势阱井与第一势垒井偏移距离至少与偏移距离基本相同。

    OFFSET BARRIER WELLS IN SUBSURFACE FORMATIONS
    4.
    发明申请
    OFFSET BARRIER WELLS IN SUBSURFACE FORMATIONS 有权
    偏移障碍物在表面形成

    公开(公告)号：US20100108310A1

    公开(公告)日：2010-05-06

    申请号：US12576790

    申请日：2009-10-09

    Applicant: Thomas David Fowler ,  Billy John McKinzie

    Inventor： Thomas David Fowler ,  Billy John McKinzie

    IPC: E21B43/30

    CPC classification number: E21B43/24 ,  E21B43/2401 ,  E21B43/2405 ,  E21B44/02 ,  H01C3/00 ,  H05B3/48 ,  H05B2214/03 ,  Y10T29/49083

    Abstract: A plurality of first barrier wells are formed in a formation for a first barrier. A substantially constant spacing separates adjacent first barrier wells. The formation is analyzed to determine the principal fracture direction of at least one layer of the formation. An offset distance of second barrier wells relative to first barrier wells is determined based on the principal fracture direction to limit a maximum separation distance between a closest barrier well and a theoretical fracture extending between the first barrier and the second barrier along the principal fracture direction to a distance of less than one half of the spacing that separates adjacent first barrier wells. The second barrier wells are offset from the first barrier wells by a distance that is at least substantially the same as the offset distance.

    Abstract translation: 在第一阻挡层的形成中形成多个第一势垒阱。 基本上恒定的间隔分离相邻的第一势垒阱。 分析地层以确定地层至少一层的主断裂方向。 基于主要断裂方向来确定第二势垒阱相对于第一势垒阱的偏移距离，以限制最接近的阻挡阱与在主破裂方向上在第一阻挡层和第二阻挡层之间延伸的理论裂缝之间的最大间隔距离， 距离小于分隔相邻的第一势垒井的间隔的一半的距离。 第二势阱井与第一势垒井偏移距离至少与偏移距离基本相同。

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