公开(公告)号：US06192829B1

公开(公告)日：2001-02-27

申请号：US09398746

申请日：1999-09-17

Applicant: Michael P. Karazim ,  Tetsuya Ishikawa ,  Rudolf Gujer ,  Thomas Kring ,  Pavel Staryuk ,  Abhi Desai ,  Tom Cho ,  Michael Douglas

Inventor： Michael P. Karazim ,  Tetsuya Ishikawa ,  Rudolf Gujer ,  Thomas Kring ,  Pavel Staryuk ,  Abhi Desai ,  Tom Cho ,  Michael Douglas

IPC: C23C1600

CPC classification number: H01J37/321

Abstract: The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (100) for a substrate processing chamber includes an antenna coil (102) disposed in a frame (104). The frame includes a plurality of spaced apart tabs (120) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (122) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.

Abstract translation: 本发明提供使用这种组件的示例性天线线圈组件和衬底处理室。 在一个实施例中，用于衬底处理室的天线线圈组件（100）包括设置在框架（104）中的天线线圈（102）。 框架包括围绕框架的周边的多个间隔开的突片（120），线圈在标签位置处联接到框架。 在每对相邻的突片之间提供至少一个凹口（122）。 切口适于促进框架在缺口处的热膨胀和收缩，以减少框架和线圈连接处的应力。

公开(公告)号：US07354501B2

公开(公告)日：2008-04-08

申请号：US10150458

申请日：2002-05-17

Applicant: Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Steve H. Kim ,  Mehrdad Moshfegh ,  Shigeru Takehiro ,  Thomas Kring ,  Tetsuya Ishikawa

Inventor： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Steve H. Kim ,  Mehrdad Moshfegh ,  Shigeru Takehiro ,  Thomas Kring ,  Tetsuya Ishikawa

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32522 ,  C23C16/507 ,  H01J37/321

Abstract: The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

Abstract translation: 本发明涉及一种等离子体CVD室的上室设计，其提供在衬底上形成薄CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有基本平坦的圆顶。 顶部RF线圈设置在圆顶顶部上方，并且具有比在腔室中要处理的基板尺寸更大的外环。 冷板设置在顶部RF线圈上方，并且尺寸大于在腔室中要处理的基板。