公开(公告)号：US20090085085A1

公开(公告)日：2009-04-02

申请号：US11865601

申请日：2007-10-01

申请人： James Chyi Lai ,  Tom Allen Agan

发明人： James Chyi Lai ,  Tom Allen Agan

IPC分类号： H01L27/108

CPC分类号： H01L27/10852

摘要： A DRAM cell includes a substrate, a transistor, and a capacitor. The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and the capacitor is formed in a metal layer. The transistor includes a source region and a drain region formed at the main surface of the substrate. The transistor also includes a control gate placed between the source region and the drain region, and separated from the substrate by a thin control dielectric. The capacitor includes a first electrode layer, a dielectric layer formed on the surface of the first electrode layer, and a second electrode layer formed on the surface of the dielectric layer. The DRAM cell increases the density and simplifies the manufacturing process. A DRAM cell with the capacitor formed in multiple layers is also provided.

摘要翻译： DRAM单元包括基板，晶体管和电容器。 基板由具有主表面的半导体材料构成，晶体管形成在主表面，电容器形成在金属层中。 晶体管包括形成在基板的主表面处的源极区域和漏极区域。 晶体管还包括放置在源极区域和漏极区域之间的控制栅极，并且通过薄的控制电介质与衬底分离。 电容器包括第一电极层，形成在第一电极层的表面上的电介质层和形成在电介质层的表面上的第二电极层。 DRAM单元增加了密度并简化了制造过程。 还提供了具有形成为多层的电容器的DRAM单元。

公开(公告)号：US07492021B2

公开(公告)日：2009-02-17

申请号：US11549726

申请日：2006-10-16

申请人： James Chyi Lai ,  Tom Allen Agan

发明人： James Chyi Lai ,  Tom Allen Agan

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  Y10T428/32

摘要： A magnetic transistor includes a magnetic section, a thin semiconductor layer, a first metal terminal, a second metal terminal, and a third metal terminal. The thin semiconductor layer is disposed on the magnetic section. The first metal terminal is disposed on one end of the magnetic section, acting as a gate of the magnetic transistor and capable of providing a conductive channel in the thin semiconductor layer. The second metal terminal and the third metal terminal are disposed respectively on one end and the other end of the thin semiconductor layer, capable of creating a conductive region. While the magnetic transistor is turned on, a current path is formed between the second metal terminal and the third metal terminal via the thin semiconductor layer.

摘要翻译： 磁性晶体管包括磁性部分，薄的半导体层，第一金属端子，第二金属端子和第三金属端子。 薄半导体层设置在磁性部分上。 第一金属端子设置在磁性部分的一端，用作磁性晶体管的栅极，并且能够在薄的半导体层中提供导电沟道。 第二金属端子和第三金属端子分别设置在能够产生导电区域的薄半导体层的一端和另一端上。 当磁晶体管导通时，经由薄半导体层在第二金属端子和第三金属端子之间形成电流路径。

公开(公告)号：US07423328B2

公开(公告)日：2008-09-09

申请号：US11539296

申请日：2006-10-06

申请人： James Chyi Lai ,  Tom Allen Agan

发明人： James Chyi Lai ,  Tom Allen Agan

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： G11C11/15

摘要： The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.

摘要翻译： 降低磁阻随机存取存储器（MRAM）中的字线电流的方法包括当磁区与其对应的字线之间的距离减小时，根据磁场强度将MRAM位置于一对字线之间。

公开(公告)号：US07269061B2

公开(公告)日：2007-09-11

申请号：US11549247

申请日：2006-10-13

申请人： Tom Allen Agan ,  James Chyi Lai

发明人： Tom Allen Agan ,  James Chyi Lai

IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/02 ,  G11C5/06 ,  G11C5/08

CPC分类号： G11C11/15

摘要： A magnetic memory has a first, a second and a third magnetic transistor. The first magnetic transistor has a first magnetic section and a second magnetic section, wherein the first magnetic section couples to a high voltage end. The second magnetic transistor has a third magnetic section and a fourth magnetic section, wherein the third magnetic section couples to a low voltage end, and the fourth magnetic section couples to the second magnetic section of the first magnetic transistor. The third magnetic transistor has a fifth magnetic section and a sixth magnetic section, wherein the fifth magnetic section couples with the second magnetic section and the fourth magnetic section together, and the sixth magnetic section couples to an input/output end.

摘要翻译： 磁存储器具有第一，第二和第三磁性晶体管。 第一磁性晶体管具有第一磁性部分和第二磁性部分，其中第一磁性部分耦合到高压端。 第二磁性晶体管具有第三磁性部分和第四磁性部分，其中第三磁性部分耦合到低电压端，并且第四磁性部分耦合到第一磁性晶体管的第二磁性部分。 第三磁性晶体管具有第五磁性部分和第六磁性部分，其中第五磁性部分与第二磁性部分和第四磁性部分耦合在一起，并且第六磁性部分耦合到输入/输出端。

公开(公告)号：US20090085529A1

公开(公告)日：2009-04-02

申请号：US11865484

申请日：2007-10-01

申请人： Tom Allen Agan ,  James Chyi Lai ,  Chien-Chiang Chan

发明人： Tom Allen Agan ,  James Chyi Lai ,  Chien-Chiang Chan

IPC分类号： H02J1/00

CPC分类号： H01G4/40

摘要： An electronics system module is provided. The electronics system module includes an electronics device and a power source. The power source includes a capacitor coupling to the electronics device and providing power thereto and an adjustable resistance connected in series between the capacitor and the electronics device. The resistance is adjusted by a control mechanism, so that the voltage supplied to the electronics device from the capacitor is constant.

摘要翻译： 提供电子系统模块。 电子系统模块包括电子设备和电源。 电源包括耦合到电子设备并向其供电的电容器和串联连接在电容器和电子设备之间的可调节电阻。 通过控制机构调整电阻，使得从电容器提供给电子器件的电压是恒定的。

公开(公告)号：US20090046502A1

公开(公告)日：2009-02-19

申请号：US11839710

申请日：2007-08-16

申请人： Tom Allen Agan ,  James Chyi Lai

发明人： Tom Allen Agan ,  James Chyi Lai

IPC分类号： G11C11/15 ,  G11C11/06 ,  H01L29/82

CPC分类号： G11C11/15

摘要： A magnetic memory cell is provided. The memory cell includes a metal device, a first word line, and a second word line. The metal device includes a first magnetic layer having a first dipole; a second magnetic layer having a second dipole; and an conductive layer located between the first and second magnetic layers. The first word line is positioned near the first magnetic layer to change the direction of the first dipole. The second word line is positioned near the second magnetic layer to change the direction of the second dipole. A method of reading/writing a bit in the magnetic memory cell is also provided.

摘要翻译： 提供磁存储单元。 存储单元包括金属器件，第一字线和第二字线。 金属器件包括具有第一偶极子的第一磁性层; 具有第二偶极子的第二磁性层; 以及位于第一和第二磁性层之间的导电层。 第一字线位于第一磁性层附近以改变第一偶极子的方向。 第二字线位于第二磁性层附近以改变第二偶极子的方向。 还提供了一种在磁存储单元中读/写位的方法。

公开(公告)号：US07397285B2

公开(公告)日：2008-07-08

申请号：US11549719

申请日：2006-10-16

申请人： Tom Allen Agan ,  James Chyi Lai

发明人： Tom Allen Agan ,  James Chyi Lai

IPC分类号： H03K19/20

CPC分类号： G11C11/16 ,  H03K19/20

摘要： A magnetic transistor circuit with the AND, NAND, NOR and OR functions has a first, a second, a third, a fourth magnetic transistor, and a routing line. These four magnetic transistors act as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The AND, NAND, NOR and OR logic functions of the binary system can be implemented by the control of these metal devices.

摘要翻译： 具有AND，NAND，NOR和OR功能的磁晶体管电路具有第一，第二，第三，第四磁性晶体管和布线。 这四个磁性晶体管用作可以通过分别设置在磁性晶体管周围的几个金属器件的控制而导通或截止的普通晶体管。 二进制系统的AND，NAND，NOR和OR逻辑功能可以通过这些金属器件的控制来实现。

公开(公告)号：US07256616B1

公开(公告)日：2007-08-14

申请号：US11549713

申请日：2006-10-16

申请人： Tom Allen Agan ,  James Chyi Lai

发明人： Tom Allen Agan ,  James Chyi Lai

IPC分类号： H03K19/0175 ,  H03K19/20

CPC分类号： H03K19/18

摘要： A magnetic transistor circuit has a first and a second magnetic transistor. These two magnetic transistors that work as the ordinary transistors can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The buffer and inverter logic functions of the binary system can be implemented by the control of these metal devices.

摘要翻译： 磁性晶体管电路具有第一和第二磁性晶体管。 作为普通晶体管工作的这两个磁性晶体管可以通过分别设置在磁性晶体管周围的多个金属器件的控制而导通或截止。 二进制系统的缓冲器和逆变器逻辑功能可以通过这些金属器件的控制来实现。

公开(公告)号：US07539046B2

公开(公告)日：2009-05-26

申请号：US11669409

申请日：2007-01-31

申请人： James Chyi Lai ,  Tom Allen Agan

发明人： James Chyi Lai ,  Tom Allen Agan

IPC分类号： G11C11/14

CPC分类号： G11C11/15 ,  H01L27/226

摘要： An integrated circuit with magnetic memory has a silicon transistor layer, at least one magnetic memory layer, and a metal routing layer. The silicon transistor layer is arranged to generate several logic operation functions. The magnetic memory layer is arranged to store the data required by the logic operation functions. The metal routing layer has several conducting lines to transmit the data between the silicon transistor layer and the magnetic memory layer.

摘要翻译： 具有磁存储器的集成电路具有硅晶体管层，至少一个磁存储层和金属布线层。 硅晶体管层被布置成产生几个逻辑运算功能。 磁存储层布置成存储逻辑运算功能所需的数据。 金属布线层具有几条传导线，以在硅晶体管层和磁存储层之间传输数据。

公开(公告)号：US20090095338A1

公开(公告)日：2009-04-16

申请号：US11871009

申请日：2007-10-11

申请人： James Chyl Lai ,  Tom Allen AGAN ,  Chung Ping Lai

发明人： James Chyl Lai ,  Tom Allen AGAN ,  Chung Ping Lai

IPC分类号： H01L31/042

CPC分类号： H02S40/38 ,  H01L28/60

摘要： A solar power source includes a solar panel and a magnetic capacitor. The solar panel receives solar energy, and the magnetic capacitor stores energy and provides electricity. The solar panel has a first side facing the sun, and the magnetic capacitor is attached to a second side of the solar panel. The magnetic capacitor has high valued storage capacitance to handle the charge generated by the solar panel, and has a barrier to leakage current, so that storage time is increased. The solar power source is applicable for many applications and has low energy transport costs. The solar power source may have a higher number of re-charging cycles compared to batteries, and may be partially charged or discharged without a reduction in charge capacity. Two methods of manufacturing the solar power source are also provided.

摘要翻译： 太阳能电源包括太阳能电池板和磁性电容器。 太阳能电池板接收太阳能，磁电容器储存能量并提供电力。 太阳能电池板具有朝向太阳的第一面，并且磁性电容器附接到太阳能电池板的第二侧。 磁性电容器具有高价值的存储电容以处理由太阳能电池板产生的电荷，并且具有对漏电流的阻挡，从而增加存储时间。 太阳能发电源适用于许多应用，能源运输成本低。 与电池相比，太阳能电源可以具有更多数量的再充电循环，并且可以部分地充电或放电，而不会降低充电容量。 还提供了制造太阳能发电源的两种方法。