公开(公告)号：US07873052B2

公开(公告)日：2011-01-18

申请号：US11787654

申请日：2007-04-16

申请人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

发明人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

IPC分类号： H04L12/28

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L22/26

摘要： Embodiments in accordance with the present invention allow a second end-point determination (EPD) system to actively control the end-pointing of a semiconductor process chamber, by leveraging a legacy EPD system that is already integrated with the chamber. In one embodiment, the second EPD system controls a shutter that regulates the amount of light transmitted between a plasma light source and an optical emission spectroscopy (OES) sensor of the legacy OES EPD system. In this embodiment, the legacy OES EPD system is pre-configured to call end-point when an artificial end-point condition occurs, i.e. the intensity of light falls below a pre-set threshold. When the second EPD system determines an actual end-point condition has been reached, it closes the shutter which, causes the light intensity being read by the OES sensor to fall below the pre-set threshold. This in turn triggers an end-point command to the chamber from the legacy OES EPD system.

摘要翻译： 根据本发明的实施例允许第二端点确定（EPD）系统通过利用已经与腔室集成的传统EPD系统来主动地控制半导体处理室的端点指向。 在一个实施例中，第二EPD系统控制快门，其调节在等离子体光源和传统OES EPD系统的光发射光谱（OES）传感器之间传输的光量。 在本实施例中，传统OES EPD系统预先配置成在出现人造终点条件时即光强度低于预定阈值时调用端点。 当第二EPD系统确定已经达到实际的终点条件时，它关闭快门，这导致由OES传感器读取的光强度低于预设阈值。 这反过来触发了从传统OES EPD系统到终端的命令。

公开(公告)号：US20080253377A1

公开(公告)日：2008-10-16

申请号：US11787654

申请日：2007-04-16

申请人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

发明人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

IPC分类号： H04L12/28

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L22/26

摘要： Embodiments in accordance with the present invention allow a second end-point determination (EPD) system to actively control the end-pointing of a semiconductor process chamber, by leveraging a legacy EPD system that is already integrated with the chamber. In one embodiment, the second EPD system controls a shutter that regulates the amount of light transmitted between a plasma light source and an optical emission spectroscopy (OES) sensor of the legacy OES EPD system. In this embodiment, the legacy OES EPD system is pre-configured to call end-point when an artificial end-point condition occurs, i.e. the intensity of light falls below a pre-set threshold. When the second EPD system determines an actual end-point condition has been reached, it closes the shutter which, causes the light intensity being read by the OES sensor to fall below the pre-set threshold. This in turn triggers an end-point command to the chamber from the legacy OES EPD system.

摘要翻译： 根据本发明的实施例允许第二端点确定（EPD）系统通过利用已经与腔室集成的传统EPD系统来主动地控制半导体处理室的端点指向。 在一个实施例中，第二EPD系统控制快门，其调节在等离子体光源和传统OES EPD系统的光发射光谱（OES）传感器之间传输的光量。 在本实施例中，传统OES EPD系统预先配置成在出现人造终点条件时即光强度低于预定阈值时调用端点。 当第二EPD系统确定已经达到实际的终点条件时，它关闭快门，这导致由OES传感器读取的光强度低于预设阈值。 这反过来触发了从传统OES EPD系统到终端的命令。

公开(公告)号：US06424232B1

公开(公告)日：2002-07-23

申请号：US09451512

申请日：1999-11-30

申请人： Anton Mavretic ,  Tomislav Lozic

发明人： Anton Mavretic ,  Tomislav Lozic

IPC分类号： H03H740

CPC分类号： H01J37/32082 ,  H01J37/32183 ,  H03H7/40

摘要： Matching the variable impedance of a load with the fixed impedance of a radio frequency (RF) power generator to provide maximum power transfer. The impedance matching network further allows a RF power generator to vary the frequency of the voltage applied to a load, e.g., a plasma chamber as may be utilized in semiconductor or flat panel plasma display manufacturing processes. The impedance matching network further utilizes fixed solid state components to adjust the impedance of the attached load to provide maximum power transfer between the generator and the load. A parallel switched capacitor network is controlled by an electrical switching means such as PIN diodes to turn fixed capacitors on or off. A means for varying the frequency of the applied voltage is used to match the impedance of the load with the impedance of the RF power generator within milliseconds.

摘要翻译： 将负载的可变阻抗与射频（RF）发电机的固定阻抗匹配，以提供最大功率传输。 阻抗匹配网络还允许RF功率发生器改变施加到诸如半导体或平板等离子体显示器制造工艺中可能使用的诸如等离子体室之类的负载的电压的频率。 阻抗匹配网络进一步利用固定固态分量来调整所连接负载的阻抗，以在发电机和负载之间提供最大的功率传输。 并联开关电容网络由诸如PIN二极管之类的电开关装置来控制以打开或关闭固定电容器。 用于改变施加电压的频率的手段用于将负载的阻抗与毫微秒内的RF发生器的阻抗相匹配。