公开(公告)号：US07873052B2

公开(公告)日：2011-01-18

申请号：US11787654

申请日：2007-04-16

申请人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

发明人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

IPC分类号： H04L12/28

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L22/26

摘要： Embodiments in accordance with the present invention allow a second end-point determination (EPD) system to actively control the end-pointing of a semiconductor process chamber, by leveraging a legacy EPD system that is already integrated with the chamber. In one embodiment, the second EPD system controls a shutter that regulates the amount of light transmitted between a plasma light source and an optical emission spectroscopy (OES) sensor of the legacy OES EPD system. In this embodiment, the legacy OES EPD system is pre-configured to call end-point when an artificial end-point condition occurs, i.e. the intensity of light falls below a pre-set threshold. When the second EPD system determines an actual end-point condition has been reached, it closes the shutter which, causes the light intensity being read by the OES sensor to fall below the pre-set threshold. This in turn triggers an end-point command to the chamber from the legacy OES EPD system.

摘要翻译： 根据本发明的实施例允许第二端点确定（EPD）系统通过利用已经与腔室集成的传统EPD系统来主动地控制半导体处理室的端点指向。 在一个实施例中，第二EPD系统控制快门，其调节在等离子体光源和传统OES EPD系统的光发射光谱（OES）传感器之间传输的光量。 在本实施例中，传统OES EPD系统预先配置成在出现人造终点条件时即光强度低于预定阈值时调用端点。 当第二EPD系统确定已经达到实际的终点条件时，它关闭快门，这导致由OES传感器读取的光强度低于预设阈值。 这反过来触发了从传统OES EPD系统到终端的命令。

公开(公告)号：US07590498B1

公开(公告)日：2009-09-15

申请号：US11948907

申请日：2007-11-30

申请人： Sherk Chung ,  Mukund Chakravarthy Venkatesh ,  Paxton Ming Kai Chow ,  Jiuyi Cheng ,  Paul Tran ,  Joseph Raymond Monkowski

发明人： Sherk Chung ,  Mukund Chakravarthy Venkatesh ,  Paxton Ming Kai Chow ,  Jiuyi Cheng ,  Paul Tran ,  Joseph Raymond Monkowski

IPC分类号： G01F17/00

CPC分类号： G01M3/38

摘要： Leaks in a processing chamber, including “virtual leaks” resulting from outgassing of material present within the chamber, may be detected utilizing an optical emission spectroscopy (OES) sensor configured to monitor light emitted from plasma of a sample from the chamber. According to certain embodiments, gas introduced into the chamber by the leak may be detected directly on the basis of its optical spectrum. Alternatively, gas introduced by the leak may be detected indirectly, based upon an optical spectrum of a material resulting from reaction of the gas attributable to the leak. According to one embodiment, data from the OES sensor is received by a processor that is configured to compute a leak detection index. The value of the leak detection index is compared against a threshold to determine if a leak is detected. If the value of the index crosses the threshold, a notification of the existence of a leak is sent.

摘要翻译： 可以利用配置成监测来自腔室的样品的等离子体发射的光的光发射光谱（OES）传感器来检测在处理室中的泄漏，包括由室内存在的物质的放气引起的“虚泄”。 根据某些实施例，可以基于其光谱直接检测通过泄漏引入到腔室中的气体。 或者，可以基于由归因于泄漏的气体的反应产生的材料的光谱，间接地检测由泄漏引入的气体。 根据一个实施例，来自OES传感器的数据被配置为计算泄漏检测指数的处理器接收。 将泄漏检测索引的值与阈值进行比较，以确定是否检测到泄漏。 如果索引的值超过阈值，则发送泄漏存在的通知。

公开(公告)号：US20080253377A1

公开(公告)日：2008-10-16

申请号：US11787654

申请日：2007-04-16

申请人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

发明人： Sherk Chung ,  Tomislav Lozic ,  Joseph Raymond Monkowski ,  Geoffrey Rodney Wong

IPC分类号： H04L12/28

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01L22/26

摘要： Embodiments in accordance with the present invention allow a second end-point determination (EPD) system to actively control the end-pointing of a semiconductor process chamber, by leveraging a legacy EPD system that is already integrated with the chamber. In one embodiment, the second EPD system controls a shutter that regulates the amount of light transmitted between a plasma light source and an optical emission spectroscopy (OES) sensor of the legacy OES EPD system. In this embodiment, the legacy OES EPD system is pre-configured to call end-point when an artificial end-point condition occurs, i.e. the intensity of light falls below a pre-set threshold. When the second EPD system determines an actual end-point condition has been reached, it closes the shutter which, causes the light intensity being read by the OES sensor to fall below the pre-set threshold. This in turn triggers an end-point command to the chamber from the legacy OES EPD system.

摘要翻译： 根据本发明的实施例允许第二端点确定（EPD）系统通过利用已经与腔室集成的传统EPD系统来主动地控制半导体处理室的端点指向。 在一个实施例中，第二EPD系统控制快门，其调节在等离子体光源和传统OES EPD系统的光发射光谱（OES）传感器之间传输的光量。 在本实施例中，传统OES EPD系统预先配置成在出现人造终点条件时即光强度低于预定阈值时调用端点。 当第二EPD系统确定已经达到实际的终点条件时，它关闭快门，这导致由OES传感器读取的光强度低于预设阈值。 这反过来触发了从传统OES EPD系统到终端的命令。