公开(公告)号：US5409517A

公开(公告)日：1995-04-25

申请号：US793384

申请日：1992-03-13

Applicant: Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

Inventor： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC: C04B35/58 ,  C23C14/34 ,  B22F5/00

CPC classification number: C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Abstract translation: PCT No.PCT / JP91 / 00639 Sec。 371日期：1992年3月13日 102（e）1992年3月13日PCT PCT 1991年5月15日提交PCT公布。 出版物WO91 / 18125 日本1991年11月28日。根据本发明，金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相，并且形成Si相的Si晶粒分散在金属硅化物的间隙中 相，以提供高密度溅射靶和低于100ppm的碳的混合结构。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。

公开(公告)号：US5612571A

公开(公告)日：1997-03-18

申请号：US512911

申请日：1995-08-09

Applicant: Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

Inventor： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC: C04B35/58 ,  C23C14/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Abstract translation: 根据本发明，金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相，并且形成Si相的Si晶粒不连续地分散在金属硅化物相的间隙中，从而提供 高密度溅射靶的混合结构，并以小于100ppm的速度含有碳。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。

公开(公告)号：US5508000A

公开(公告)日：1996-04-16

申请号：US345405

申请日：1994-11-21

Applicant: Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

Inventor： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC: C04B35/58 ,  C23C14/34 ,  B22F1/00

CPC classification number: C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

Abstract: According to the present invention, silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Abstract translation: 根据本发明，硅化物颗粒以连接方式彼此连接以提供金属硅化物相，并且形成Si相的晶粒不连续地分散在金属硅化物相的间隙中，以提供混合结构 的高密度溅射靶并以小于100ppm的速度含有碳。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。