公开(公告)号：US06551939B2

公开(公告)日：2003-04-22

申请号：US09268203

申请日：1999-03-15

申请人： Toshi Takamatsu ,  Shuzo Fujimura

发明人： Toshi Takamatsu ,  Shuzo Fujimura

IPC分类号： H01L21302

CPC分类号： H01L21/02046 ,  G03F7/427 ,  H01L21/31116

摘要： The present invention provides a method for treating a surface of an object using, for example, a downstream region of a plasma source. The method includes a step of generating a plasma from a gas-C in a plasma source, where the gas-C includes a gas-A and a gas-B. Gas-A is selected from a compound comprising at least a nitrogen bearing compound or an other gas. The other gas is selected from a mixture of an element in group 18 classified in the atomic periodic table. Gas-B includes at least a NH3 bearing compound. The method also includes a step of injecting a gas-D downstream of the plasma source of the gas-C. The method also includes a step of setting an object (having a surface) downstream of the gas-D injection and downstream of the plasma source. A step of processing the surface of the object by a mixture species generated from the gas-C in the plasma and the gas-D is included. The NH3 bearing compound in the gas-C includes a NH3 bearing concentration that is lower than an explosion limit of NH3, which is safer than conventional techniques.

摘要翻译： 本发明提供使用例如等离子体源的下游区域处理物体的表面的方法。 该方法包括从等离子体源中的气体C产生等离子体的步骤，其中气体-C包括气体-A和气体B。 气体-A选自包含至少含氮化合物或其它气体的化合物。 其他气体选自分类在原子周期表中的组18中的元素的混合物。 气体-B至少包含含NH 3的化合物。 该方法还包括在气体C的等离子体源的下游注入气体-D的步骤。 该方法还包括将气体-D注入下游的物体（具有表面）设置在等离子体源的下游的步骤。 包括通过由等离子体中的气体-C产生的混合物和气体-D来处理物体的表面的步骤。 气体C中的含NH 3的化合物包括NH3的浓度低于NH3的爆炸极限，比常规技术更安全。