Magnetoresistance effect element
    2.
    发明授权
    Magnetoresistance effect element 失效
    磁阻效应元件

    公开(公告)号:US5432661A

    公开(公告)日:1995-07-11

    申请号:US191200

    申请日:1994-02-03

    摘要: A magnetoresistance effect element is provided which comprises a substrate on which a first magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt, a second magnetic layer having a thickness of not larger than 5 nm which contains iron or nickel or an alloy thereof, a third magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt and a nonmagnetic layer having a thickness of 0.5 to 5 nm are laminated in this order at least twice, wherein the thickness of the second magnetic layer is not larger than half of the total thickness of the first and third magnetic layers. The element is useful as a magnetoresistance sensor or head.

    摘要翻译: 提供了一种磁电阻效应元件,其包括其上含有钴的厚度为0.2至5nm的第一磁性层,含有铁或镍的厚度不大于5nm的第二磁性层或其合金的衬底 含有钴的厚度为0.2〜5nm的第三磁性层和厚度为0.5〜5nm的非磁性层的厚度依次层叠至少两次,其中第二磁性层的厚度不大于一半 的第一和第三磁性层的总厚度。 该元件可用作磁阻传感器或磁头。