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公开(公告)号:US5670458A
公开(公告)日:1997-09-23
申请号:US598040
申请日:1996-02-07
申请人: Mikio Takano , Zenji Hiroi , Yasuo Takeda , Toshio Takada, deceased , by Komichi Takada, administrator , by Jun Takada, administrator , by Kei Takada, administrator
发明人: Mikio Takano , Zenji Hiroi , Yasuo Takeda , Toshio Takada, deceased , by Komichi Takada, administrator , by Jun Takada, administrator , by Kei Takada, administrator
CPC分类号: B01J3/062 , C04B35/45 , H01L39/126 , Y10S505/776
摘要: An oxide superconductor having a composition of the formula: A.sub.n+1 Cu.sub.n O.sub.2n+1+.delta. in which A is at least one alkaline earth metal element selected from the group consisting of calcium, strontium and barium, n is an integer of at least one, and .delta. is a number larger than 0 and not larger than 1, a laminate structure in which a layer having a partial composition of A.sub.2 O.sub.1+.delta. and a layer having a partial composition of A.sub.n-1 Cu.sub.n O.sub.2n are alternately laminated, and a superconductive critical temperature equal to or higher than the liquid nitrogen temperature.
摘要翻译: 具有下式的组成的氧化物超导体:A + 1CunO2n + 1 +δ,其中A是选自钙,锶和钡中的至少一种碱土金属元素,n是至少一个的整数,以及 Δ是大于0且不大于1的数字,其中具有部分组成为A2O1 +δ的层和具有部分组成为An-1CunO2n的层交替层叠的层压结构,并且超导临界温度等于或等于 高于液氮温度。
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公开(公告)号:US5432661A
公开(公告)日:1995-07-11
申请号:US191200
申请日:1994-02-03
CPC分类号: B82Y25/00 , G01R33/093 , G11B5/3903 , H01L43/08
摘要: A magnetoresistance effect element is provided which comprises a substrate on which a first magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt, a second magnetic layer having a thickness of not larger than 5 nm which contains iron or nickel or an alloy thereof, a third magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt and a nonmagnetic layer having a thickness of 0.5 to 5 nm are laminated in this order at least twice, wherein the thickness of the second magnetic layer is not larger than half of the total thickness of the first and third magnetic layers. The element is useful as a magnetoresistance sensor or head.
摘要翻译: 提供了一种磁电阻效应元件,其包括其上含有钴的厚度为0.2至5nm的第一磁性层,含有铁或镍的厚度不大于5nm的第二磁性层或其合金的衬底 含有钴的厚度为0.2〜5nm的第三磁性层和厚度为0.5〜5nm的非磁性层的厚度依次层叠至少两次,其中第二磁性层的厚度不大于一半 的第一和第三磁性层的总厚度。 该元件可用作磁阻传感器或磁头。
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