公开(公告)号：US20100038681A1

公开(公告)日：2010-02-18

申请号：US12540230

申请日：2009-08-12

申请人： Masahiro SUGIMOTO ,  Tat-Sing Paul Chow ,  Zhongda Li ,  Totsu Kachi ,  Tsutomu Uesugi

发明人： Masahiro SUGIMOTO ,  Tat-Sing Paul Chow ,  Zhongda Li ,  Totsu Kachi ,  Tsutomu Uesugi

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0642 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/66462 ,  H01L29/7788

摘要： An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.

摘要翻译： 公开了一种HEMT型晶体管，其是常闭型，栅极阈值电压的变化小。 晶体管设置有p型区域，势垒区域，绝缘膜，栅极电极。 沟道区域连接到p型区域的上表面。 通道区域是n型或i型，并且设置有第一通道区域和第二通道区域。 阻挡区域与第一通道区域的上表面形成异质结。 绝缘膜连接到第二通道区域的上表面和阻挡区域的上表面。 栅电极经由绝缘膜面向第二沟道区和阻挡区。 第一通道区域和第二通道区域在电流通路中串联布置。