公开(公告)号：US20060012021A1

公开(公告)日：2006-01-19

申请号：US10890343

申请日：2004-07-13

申请人： John Larson, ,  Qing Bai ,  Farid Matta ,  Tracy Verhoeven

发明人： John Larson, ,  Qing Bai ,  Farid Matta ,  Tracy Verhoeven

IPC分类号： H01L21/48 ,  H01L23/52

CPC分类号： H03H9/105 ,  H03B5/326 ,  H03H3/02 ,  H03H9/0547 ,  H03H9/706

摘要： A microfabricated device has a first substrate, a second substrate, a film bulk acoustic resonator (FBAR) device, and a circuit. The second substrate is bonded to the first substrate to define a chamber. The FBAR device is located on a surface of the first substrate and inside the chamber. The circuit is located on a surface of the second substrate and inside the chamber. An electrical connection connects the circuit and the FBAR device.

公开(公告)号：US20050181572A1

公开(公告)日：2005-08-18

申请号：US10778618

申请日：2004-02-13

申请人： Tracy Verhoeven ,  Richard Ruby

发明人： Tracy Verhoeven ,  Richard Ruby

IPC分类号： H01L21/20 ,  H01L21/30 ,  H01L21/46 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H03H9/0542 ,  H03H3/02 ,  H03H9/173 ,  H03H2003/021

摘要： A method for acoustically isolating an acoustic resonator comprises: providing a substrate; forming a porous region in the substrate; forming the acoustic resonator on the porous region; and removing the porous region from the substrate. The removing forms a cavity that separates a portion of the acoustic resonator from the substrate. By using the techniques described herein, it is possible to form an acoustic resonator on a substrate and to form a cavity between the acoustic resonator and the substrate without depositing sacrificial material.

摘要翻译： 用于声学隔离声谐振器的方法包括：提供衬底; 在所述基板中形成多孔区域; 在所述多孔区域上形成所述声共振器; 以及从所述基底去除所述多孔区域。 去除形成将声谐振器的一部分与基板分离的空腔。 通过使用本文描述的技术，可以在衬底上形成声谐振器并在声谐振器和衬底之间形成空腔，而不沉积牺牲材料。

公开(公告)号：US07615833B2

公开(公告)日：2009-11-10

申请号：US10890343

申请日：2004-07-13

申请人： John D. Larson, III ,  Qing Bai ,  Farid Matta ,  Tracy Verhoeven

发明人： John D. Larson, III ,  Qing Bai ,  Farid Matta ,  Tracy Verhoeven

IPC分类号： H01L41/00

CPC分类号： H03H9/105 ,  H03B5/326 ,  H03H3/02 ,  H03H9/0547 ,  H03H9/706

摘要： A microfabricated device has a first substrate, a second substrate, a film bulk acoustic resonator (FBAR) device, and a circuit. The second substrate is bonded to the first substrate to define a chamber. The FBAR device is located on a surface of the first substrate and inside the chamber. The circuit is located on a surface of the second substrate and inside the chamber. An electrical connection connects the circuit and the FBAR device.

摘要翻译： 微加工装置具有第一基板，第二基板，薄膜体声波谐振器（FBAR）装置和电路。 第二基板被结合到第一基板以限定室。 FBAR装置位于第一基板的表面和室内。 电路位于第二基板的表面和室内。 电气连接连接电路和FBAR设备。

公开(公告)号：US20060094206A1

公开(公告)日：2006-05-04

申请号：US10976750

申请日：2004-10-29

申请人： Ken Nishimura ,  Qing Bai ,  Tracy Verhoeven

发明人： Ken Nishimura ,  Qing Bai ,  Tracy Verhoeven

IPC分类号： H01L21/30

CPC分类号： H01L25/18 ,  H01L25/0657 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a first material, and a component of a second type fabricated on a second substrate containing a second material. The first material has better compatibility than the second material with fabrication and/or performance of the component of the first type, while the second material has better compatibility than the first material with fabrication and/or performance of the component of the second type. Also described, is a method of making the above-mentioned integrated circuit, the method including, among other steps, the step of disposing the first and second substrates opposite one another, and the step of establishing an electrical connection between the components.

摘要翻译： 提供了集成电路的装置，封装和制造方法。 该集成电路包括在包含第一材料的第一基板上制造的第一类型的部件和在包含第二材料的第二基板上制造的第二类型的部件。 第一种材料具有比具有第一类型的部件的制造和/或性能的第二材料更好的相容性，而第二种材料具有比具有第二类型的部件的制造和/或性能的第一材料更好的兼容性。 还描述了制造上述集成电路的方法，该方法还包括将第一和第二基板相对地布置的步骤以及在部件之间建立电连接的步骤。