公开(公告)号：US06984822B2

公开(公告)日：2006-01-10

申请号：US10406339

申请日：2003-04-02

Applicant: David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

Inventor： David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/285

Abstract: An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

公开(公告)号：US06087659A

公开(公告)日：2000-07-11

申请号：US354948

申请日：1999-07-16

Applicant: David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

Inventor： David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

IPC: G01N23/225 ,  G01Q30/02 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285 ,  H01L21/66

CPC classification number: H01J37/285

Abstract: An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

公开(公告)号：US20220402089A1

公开(公告)日：2022-12-22

申请号：US17304462

申请日：2021-06-22

Applicant: Jackson Travis Wolfe

Inventor： Jackson Travis Wolfe

IPC: B24B23/02 ,  B25F3/00 ,  B25F5/02

Abstract: A power tool that is configured to provide finishing of a surface of an object wherein the power tool provides movement in a first direction and a second direction. The power tool of the present invention includes a housing wherein the housing has a coupling assembly secured to the front end thereof. The rear end of the housing includes a brush compartment formed therein. A sanding member is releasably secured to the coupling assembly and includes a planar body configured to have sanding paper secured thereto. A filing member is also provided and configured to be releasably secured to the coupling assembly. The filing member includes a rectangular body having formations on the outer surface thereof. A three-way switch provides control to move the sanding member and the filing member in the first and second direction. A battery power supply is disposed in the housing.

公开(公告)号：US5973323A

公开(公告)日：1999-10-26

申请号：US964544

申请日：1997-11-05

Applicant: David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

Inventor： David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

IPC: G01N23/225 ,  G01Q30/02 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285 ,  H01L21/66 ,  H01J37/26

CPC classification number: H01J37/285

Abstract: An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM.

Abstract translation: 提出了一种使用电子束检查样品表面，特别是但不限于半导体器件的装置和方法。 该技术被称为二次电子发射显微镜（SEEM），并且具有优于扫描电子显微镜（SEM）和低能量电子显微镜（LEEM）技术的显着优点。 特别地，SEEM技术利用具有适于平行多像素成像的光束宽度的相对高能量的一次电子束。 电子能量接近电荷稳定条件以实现比先前可用SEM更快的成像，并且电荷中性在LEEM中不能实现。

公开(公告)号：US06713759B2

公开(公告)日：2004-03-30

申请号：US10033452

申请日：2001-11-02

Applicant: David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

Inventor： David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

IPC: H01J37244

CPC classification number: H01J37/285

Abstract: An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

Abstract translation: 提出了一种使用电子束检查样品表面，特别是但不限于半导体器件的装置和方法。 该技术被称为二次电子发射显微镜（SEEM），并且具有优于扫描电子显微镜（SEM）和低能量电子显微镜（LEEM）技术的显着优点。 特别地，SEEM技术利用具有适于平行多像素成像的光束宽度的相对高能量的一次电子束。 电子能量接近电荷稳定条件以实现比先前可用SEM更快的成像，并且电荷中性在LEEM中不能实现。 可以使用时间延迟积分检测器来检测发射的电子。