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公开(公告)号:US20070134861A1
公开(公告)日:2007-06-14
申请号:US11300147
申请日:2005-12-14
申请人: Jin-Ping Han , Renee Mo , Tsong Tai , Anita Madan , Nivo Rovedo , Victor Ku , Martin Frank , Daeyoung Lim , Richard Haight
发明人: Jin-Ping Han , Renee Mo , Tsong Tai , Anita Madan , Nivo Rovedo , Victor Ku , Martin Frank , Daeyoung Lim , Richard Haight
IPC分类号: H01L21/8234
CPC分类号: H01L21/823857 , H01L21/823828
摘要: Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment includes providing a workpiece, forming a gate dielectric material over the workpiece, the gate dielectric material comprising an insulator and at least one metal element, and forming a conductive material over the gate dielectric material. The conductive material comprises the at least one metal element of the gate dielectric material.
摘要翻译: 公开了半导体器件及其制造方法。 优选实施例包括提供工件,在工件上形成栅极电介质材料,栅极电介质材料包括绝缘体和至少一个金属元件,并在栅极电介质材料上形成导电材料。 导电材料包括栅介电材料的至少一个金属元件。