公开(公告)号：US07138338B2

公开(公告)日：2006-11-21

申请号：US10810804

申请日：2004-03-29

申请人： Chang-Rong Wu ,  Yinan Chen ,  Tuz-Ching Tsai

发明人： Chang-Rong Wu ,  Yinan Chen ,  Tuz-Ching Tsai

IPC分类号： H01L21/311

CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/76224 ,  H01L29/66181

摘要： A method and structure for forming deep trenches in a semiconductor substrate is provided. The method comprises: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a pad nitride layer on the pad oxide layer; forming a borophosphosilicate glass layer on the pad nitride layer; forming a borosilicate glass layer on the borophosphosilicate glass layer; and forming deep trenches through the borosilicate glass layer, through the borophosphosilicate glass layer, through the pad nitride, through the pad oxide, and into the semiconductor substrate. The borosilicate glass layer and the borophosphosilicate glass layer function as a composite hard mask in forming the deep trenches. With the borophosphosilicate glass layer, the composite hard mask can be easily removed by dry etch process using hydrogen fluoride vapor after the deep trenches have been formed.

摘要翻译： 提供了一种在半导体衬底中形成深沟槽的方法和结构。 该方法包括：提供半导体衬底; 在所述半导体衬底上形成衬垫氧化物层; 在所述焊盘氧化物层上形成衬垫氮化物层; 在衬垫氮化物层上形成硼磷硅酸盐玻璃层; 在硼磷硅酸盐玻璃层上形成硼硅酸盐玻璃层; 并通过硼硅酸盐玻璃层，通过硼磷硅酸盐玻璃层，通过衬垫氮化物，通过衬垫氧化物形成深沟槽并进入半导体衬底。 硼硅酸盐玻璃层和硼磷硅酸盐玻璃层在形成深沟槽时用作复合硬掩模。 对于硼磷硅酸盐玻璃层，在形成深沟槽之后，可以通过使用氟化氢蒸气的干法蚀刻工艺容易地去除复合硬掩模。

公开(公告)号：US20050215061A1

公开(公告)日：2005-09-29

申请号：US10810804

申请日：2004-03-29

申请人： Chang-Rong Wu ,  Yinan Chen ,  Tuz-Ching Tsai

发明人： Chang-Rong Wu ,  Yinan Chen ,  Tuz-Ching Tsai

IPC分类号： H01L21/033 ,  H01L21/20 ,  H01L21/308 ,  H01L21/31 ,  H01L21/311 ,  H01L21/334 ,  H01L21/469 ,  H01L21/762 ,  H01L21/8242

CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/76224 ,  H01L29/66181

摘要： A method and structure for forming deep trenches in a semiconductor substrate is provided. The method comprises: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a pad nitride layer on the pad oxide layer; forming a borophosphosilicate glass layer on the pad nitride layer; forming a borosilicate glass layer on the borophosphosilicate glass layer; and forming deep trenches through the borosilicate glass layer, through the borophosphosilicate glass layer, through the pad nitride, through the pad oxide, and into the semiconductor substrate. The borosilicate glass layer and the borophosphosilicate glass layer function as a composite hard mask in forming the deep trenches. With the borophosphosilicate glass layer, the composite hard mask can be easily removed by dry etch process using hydrogen fluoride vapor after the deep trenches have been formed.

摘要翻译： 提供了一种在半导体衬底中形成深沟槽的方法和结构。 该方法包括：提供半导体衬底; 在所述半导体衬底上形成衬垫氧化物层; 在所述焊盘氧化物层上形成衬垫氮化物层; 在衬垫氮化物层上形成硼磷硅酸盐玻璃层; 在硼磷硅酸盐玻璃层上形成硼硅酸盐玻璃层; 并通过硼硅酸盐玻璃层，通过硼磷硅酸盐玻璃层，通过衬垫氮化物，通过衬垫氧化物形成深沟槽并进入半导体衬底。 硼硅酸盐玻璃层和硼磷硅酸盐玻璃层在形成深沟槽时用作复合硬掩模。 对于硼磷硅酸盐玻璃层，在形成深沟槽之后，可以通过使用氟化氢蒸气的干法蚀刻工艺容易地去除复合硬掩模。