公开(公告)号：US10276504B2

公开(公告)日：2019-04-30

申请号：US15597565

申请日：2017-05-17

申请人： Vivien Luu ,  Christopher F. Kirby ,  Brian Wagner ,  Michael Rennie

发明人： Vivien Luu ,  Christopher F. Kirby ,  Brian Wagner ,  Michael Rennie

IPC分类号： H01L23/532 ,  H01L21/00 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L39/24

摘要： A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.

公开(公告)号：US20180337138A1

公开(公告)日：2018-11-22

申请号：US15597565

申请日：2017-05-17

申请人： VIVIEN LUU ,  CHRISTOPHER F. KIRBY ,  BRIAN WAGNER ,  MICHAEL RENNIE

发明人： VIVIEN LUU ,  CHRISTOPHER F. KIRBY ,  BRIAN WAGNER ,  MICHAEL RENNIE

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L23/53285 ,  H01L21/02063 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76891 ,  H01L23/5226 ,  H01L39/2406

摘要： A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.