公开(公告)号：US20170194527A1

公开(公告)日：2017-07-06

申请号：US15356152

申请日：2016-11-18

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0336 ,  H01L27/144 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US06528105B1

公开(公告)日：2003-03-04

申请号：US09617676

申请日：2000-07-14

申请人： Mark Gerhart ,  Edward O'Brien ,  Simon Gainey ,  Robert Guldi ,  Brian Wagner ,  Mike Richmond

发明人： Mark Gerhart ,  Edward O'Brien ,  Simon Gainey ,  Robert Guldi ,  Brian Wagner ,  Mike Richmond

IPC分类号： B65D300

CPC分类号： A47G19/02 ,  B65D81/3227

摘要： The invention discloses a method and an apparatus for a food container which includes an inner member (which can be a cup or a bottle) for holding a particulate food; an outer member (which can be a second cup or a second bottle) adapted to receive the inner member, with a space between the inner and the outer members, for a liquid food; where the inner member interlocks with the outer member and openings are provided for the discharge of the liquid food; and the particulate food and the liquid food can be consumed simultaneously by tilting the container towards the mouth of the user to discharge or withdraw particulate food from the inner member and liquid food from the outer member through the aperture.

公开(公告)号：US10211359B2

公开(公告)日：2019-02-19

申请号：US15356152

申请日：2016-11-18

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US20150236186A1

公开(公告)日：2015-08-20

申请号：US14185567

申请日：2014-02-20

申请人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L31/0336 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US07980233B2

公开(公告)日：2011-07-19

申请号：US12111445

申请日：2008-04-29

申请人： Brian Wagner ,  Roger Zoch ,  Barry Verdegan ,  Harold R. Martin ,  Jeff Morgan ,  Stephen L. Fallon

发明人： Brian Wagner ,  Roger Zoch ,  Barry Verdegan ,  Harold R. Martin ,  Jeff Morgan ,  Stephen L. Fallon

IPC分类号： F02B25/06

CPC分类号： F01M9/02 ,  F01M13/04 ,  F01M2013/0016 ,  F01M2013/0433 ,  F01M2013/0483 ,  F01M2013/0488

摘要： A separation assembly is generally described that can chemically treat condensate material in a fluid stream. One particular example of a separation assembly is a crankcase filtration assembly used in engine oil filtration and that includes an additive material disposed within the crankcase filtration assembly. The additive material chemically treats condensate material of blow-by fluids received by the crankcase filtration assembly when a condition is present in the condensate material. For example, the crankcase filtration assembly provides a unique structure with a chemically treated component that can reduce an acidic condition in condensate material received by the crankcase filtration assembly, and even more generally may extend engine oil life.

摘要翻译： 通常描述分离组件，其可以在流体流中化学处理冷凝物质。 分离组件的一个具体示例是用于发动机油过滤中的曲轴箱过滤组件，并且包括设置在曲轴箱过滤组件内的添加剂材料。 当冷凝材料中存在条件时，添加剂材料化学处理由曲轴箱过滤组件接收的窜气流体的冷凝物质。 例如，曲轴箱过滤组件提供具有化学处理组分的独特结构，其可以减少由曲轴箱过滤组件接收的冷凝物质中的酸性状态，甚至更通常地可延长发动机油寿命。

公开(公告)号：US20090266346A1

公开(公告)日：2009-10-29

申请号：US12111445

申请日：2008-04-29

申请人： Brian WAGNER ,  Roger ZOCH ,  Barry VERDEGAN ,  Harold R. MARTIN ,  Jeff MORGAN ,  Stephen L. FALLON

发明人： Brian WAGNER ,  Roger ZOCH ,  Barry VERDEGAN ,  Harold R. MARTIN ,  Jeff MORGAN ,  Stephen L. FALLON

IPC分类号： F02B25/06

CPC分类号： F01M9/02 ,  F01M13/04 ,  F01M2013/0016 ,  F01M2013/0433 ,  F01M2013/0483 ,  F01M2013/0488

摘要： A separation assembly is generally described that can chemically treat condensate material in a fluid stream. One particular example of a separation assembly is a crankcase filtration assembly used in engine oil filtration and that includes an additive material disposed within the crankcase filtration assembly. The additive material chemically treats condensate material of blow-by fluids received by the crankcase filtration assembly when a condition is present in the condensate material. For example, the crankcase filtration assembly provides a unique structure with a chemically treated component that can reduce an acidic condition in condensate material received by the crankcase filtration assembly, and even more generally may extend engine oil life.

摘要翻译： 通常描述分离组件，其可以在流体流中化学处理冷凝物质。 分离组件的一个具体示例是用于发动机油过滤中的曲轴箱过滤组件，并且包括设置在曲轴箱过滤组件内的添加剂材料。 当冷凝材料中存在条件时，添加剂材料化学处理由曲轴箱过滤组件接收的窜气流体的冷凝物质。 例如，曲轴箱过滤组件提供具有化学处理组分的独特结构，其可以减少由曲轴箱过滤组件接收的冷凝物质中的酸性状态，甚至更通常地可延长发动机油寿命。

公开(公告)号：US20080218940A1

公开(公告)日：2008-09-11

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G5/013 ,  C01F11/02 ,  C01F17/00 ,  C01G23/00 ,  C01G3/02 ,  H01G5/011

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器

公开(公告)号：US07371282B2

公开(公告)日：2008-05-13

申请号：US11484691

申请日：2006-07-12

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为起始材料的气相沉积工艺在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。

公开(公告)号：US20080011223A1

公开(公告)日：2008-01-17

申请号：US11484691

申请日：2006-07-12

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

公开(公告)号：US20070157808A1

公开(公告)日：2007-07-12

申请号：US11327614

申请日：2006-01-06

申请人： Brian Wagner ,  Scott Heckel

发明人： Brian Wagner ,  Scott Heckel

IPC分类号： B01D46/00

CPC分类号： B01D46/002 ,  B01D29/52 ,  B01D46/2403 ,  B01D2267/30 ,  B01D2275/206 ,  B01D2275/207

摘要： A filter assembly has a plurality of filter elements extending longitudinally in a housing interior volume and shaped to increase filter media area by reducing unused space in the interior volume as compared to filter elements having a cylindrical shape.

摘要翻译： 过滤器组件具有在壳体内部容积中纵向延伸的多个过滤器元件，并且通过与具有圆柱形形状的过滤器元件相比减小内部空间中的未使用空间而成形为增加过滤器介质面积。