摘要:
The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.
摘要:
A process for producing phosgene is disclosed which involves contacting a mixture comprising CO and Cl.sub.2 (e.g, at about 300.degree. C. or less) with a silicon carbide catalyst having a surface area of at least 10 m.sup.2.g.sup.-1.
摘要:
A nanostructure having at least one nanotube and at least one chemical moiety non-covalently attached to the at least one nanotube. At least one dendrimer is bonded to the chemical moiety. The chemical moiety may include soluble polymers, soluble oligomers, and combinations thereof. A method of dispersing at least one nanotube is also described. The method includes providing at least one nanotube and at least one chemical moiety to a solvent; debundling the nanotube; and non-covalently attaching a chemical moiety to the nanotube, wherein the non-covalently attached chemical moiety disperses the nanotube. A method of separating at least one semi-conducting carbon nanotube is also described.
摘要:
A process for producing sulfuryl chloride and/or thionyl chloride is disclosed which involves contacting a mixture comprising SO.sub.2 and Cl.sub.2 (e.g., at about 300.degree. C. or less) with a silicon carbide catalyst having a surface area of at least 10 m.sup.2 .multidot.g.sup.-1.
摘要:
A process for producing phosgene is disclosed which involves contacting a mixture comprising CO and Cl.sub.2 (e.g., at about 300.degree. C. or less) with carbon having an active metal content of less than 1000 ppm by weight and a high degree of oxidative stability (i.e., a weight loss of about 12 percent, or less, in the WVC Temperature Test as defined herein).
摘要:
The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.
摘要:
A process suitable for producing high purity alkaline earth fluoride product is disclosed which involves (a) mixing (i) MgO, CaO, BaO, Mg(OH).sub.2, Ca(OH).sub.2, and/or Ba(OH).sub.2, (ii) NaOH, KOH and/or NH.sub.4 OH, and (iii) water, to form an aqueous slurry having a temperature of at least 20.degree. C. and an aqueous phase pH of at least 13; (b) adding fluosilicic acid, optionally adding additional water and optionally adding additional NaOH, KOH and/or NH.sub.4 OH to the slurry of (a) at a rate which maintains an aqueous phase pH of 11 or above, and in an amount to provide a molar ratio of Si: (Mg, Ca, and Ba) of at least 1:3.3, a molar ratio of (Na, K, and NH.sub.4):Si of at least 2:1, and a molar ratio of water:Si of at least 20:1, and to obtain a precipitate comprising an alkaline earth fluoride (MgF.sub.2, CaF.sub.2 and/or BaF.sub.2), and an aqueous solution of a soluble silicon anionic compound; and (c) recovering the alkaline earth fluoride product.
摘要:
A process for producing sulfuryl chloride and/or thionyl chloride is disclosed which involves contacting a mixture comprising SO.sub.2 and Cl.sub.2 (e.g., at about 300.degree. C. or less) with carbon having an active metal content of less than 1000 ppm by weight and a high degree of oxidative stability (i.e., a weight loss of about 12%, or less, in the WVC Temperature Test as defined herein).
摘要:
A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.
摘要:
A method is disclosed for producing phosgene which in one embodiment comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine sequentially with a first catalyst followed by contacting the resulting gaseous reaction mixture comprising phosgene with at least one second catalyst of higher relative activity than a first catalyst. In another embodiment a method is disclosed for producing phosgene which comprises contacting in at least one reactor a mixture comprising carbon monoxide and chlorine with at least one catalyst bed comprising a first catalyst wherein at least a portion of said first catalyst is diluted with a second catalyst of higher relative activity than a first catalyst.