WHITE LIGHT EMITTING DIODE
    5.
    发明申请
    WHITE LIGHT EMITTING DIODE 审中-公开
    白光发光二极管

    公开(公告)号:US20120074380A1

    公开(公告)日:2012-03-29

    申请号:US13246032

    申请日:2011-09-27

    IPC分类号: H01L33/04 H01L33/28

    摘要: A white light emitting diode (LED) and method for forming the white LED are provided, wherein a semiconductor material is formed directly with a epitaxial method on a GaN epitaxial structure. The semiconductor material is a doped II-VI semiconductor compound with a broad FWHM (Full Width at Half Maximum) compared to conventional phosphor, can provide a white LED with better color rendering.

    摘要翻译: 提供了一种用于形成白色LED的白色发光二极管(LED)和方法,其中在GaN外延结构上直接用外延法形成半导体材料。 半导体材料是与常规荧光粉相比具有宽FWHM(全宽度最大值)的掺杂II-VI半导体化合物,可以提供具有更好显色性能的白色LED。