公开(公告)号：US07883991B1

公开(公告)日：2011-02-08

申请号：US12707752

申请日：2010-02-18

Applicant: Wen-Jin Wu ,  Wen-Chih Chiou ,  Shau-Lin Shue

Inventor： Wen-Jin Wu ,  Wen-Chih Chiou ,  Shau-Lin Shue

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of bonding and detaching a temporary carrier used for handling a wafer during the fabrication of semiconductor devices includes bonding a wafer onto a carrier through a first adhesive layer and a second adhesive layer, in which the edge zone of the wafer and the carrier is covered by the first adhesive layer while the edge zone is not covered by the second adhesive layer. A wafer edge clean process is then performed to remove the first adhesive layer adjacent the edge of the wafer and expose the edge zone of the carrier, followed by removing the second adhesive layer from the carrier. After detaching the carrier from the wafer, the first adhesive layer remaining on the wafer is removed.

Abstract translation: 在半导体器件的制造期间，接合和分离用于处理晶片的临时载体的方法包括通过第一粘合剂层和第二粘合剂层将晶片接合到载体上，其中晶片和载体的边缘区域 被第一粘合剂层覆盖，而边缘区域不被第二粘合剂层覆盖。 然后进行晶片边缘清洁工艺以除去邻近晶片边缘的第一粘合剂层，并暴露载体的边缘区域，然后从载体上除去第二粘合剂层。 在从晶片上分离载体之后，去除残留在晶片上的第一粘合剂层。