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公开(公告)号:US07888241B2
公开(公告)日:2011-02-15
申请号:US12135245
申请日:2008-06-09
申请人: Ashima B. Chakravarti , Anthony I. Chou , Toshiharu Furukawa , Steven J. Holmes , Wesley C. Nazle
发明人: Ashima B. Chakravarti , Anthony I. Chou , Toshiharu Furukawa , Steven J. Holmes , Wesley C. Nazle
CPC分类号: H01L29/7833 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L2224/05571 , H01L2224/05573 , H01L2224/10126 , H01L2224/13023 , H01L2924/1305 , H01L2924/00
摘要: A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
摘要翻译: 在半导体制造工艺中选择性地形成锗结构的方法在化学氧化物去除(COR)工艺中从氮化物表面去除天然氧化物,然后将加热的氮化物和氧化物表面暴露于加热的含锗气体,以仅选择性地形成锗 氮化物表面而不是氧化物表面。