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公开(公告)号:US4310568A
公开(公告)日:1982-01-12
申请号:US960983
申请日:1978-11-15
IPC分类号: H01L21/285 , H01L21/338 , H01L29/47 , H01L29/48
CPC分类号: H01L29/66848 , H01L21/28537 , H01L29/47
摘要: An aluminum-transition metal Schottky barrier contact, and methods of fabrication thereof are disclosed. In one preferred embodiment, the junction is comprised of an aluminum-tantalum intermetallic layer abutting a silicon substrate. Alternate embodiments utilize an intermetallic compound of a metal selected from the group of tantalum, zirconium, hafnium, niobium, titanium and nickel in combination with aluminum. The preferred embodiments can be fabricated by evaporation of a layer of a metal selected from the above mentioned group followed by evaporation of a layer of aluminum on a silicon substrate, after which an annealing step is utilized which creates the desired intermetallic compound in a layer abutting the silicon surface. Alternatively, the junction can be created by hot or cold sputtering of a preselected intermetallic compound of one of the metals with aluminum directly upon the silicon substrate, followed by deposition of a conductive layer such as aluminum. In the case of cold sputtering an annealing step is required to perfect the desired intermetallic compound structure; and in the case of hot sputtering an annealing step may be useful in perfecting the desired intermetallic structure, although it is not essential. The resulting devices are highly thermally stable with predictable barrier heights; and exhibit excellent electrical properties while they are capable of fabrication with good planarity.
摘要翻译: 公开了铝 - 过渡金属肖特基势垒接触及其制造方法。 在一个优选实施例中,接合部包括邻接硅衬底的铝 - 钽金属间化合物层。 替代实施例使用选自钽,锆,铪,铌,钛和镍的金属的金属间化合物与铝的组合。 优选的实施方案可以通过蒸发选自上述组的金属层,然后在硅衬底上蒸发一层铝制成,之后利用退火步骤,其形成邻接的层中所需的金属间化合物 硅表面。 或者,可以通过在硅衬底上直接将铝中一种金属的预选金属间化合物用铝直接溅射,然后沉积诸如铝的导电层来产生结。 在冷溅射的情况下,需要退火步骤来完善所需的金属间化合物结构; 并且在热溅射的情况下,退火步骤可用于完善所需的金属间结构,尽管不是必需的。 所得到的器件具有高度的热稳定性和可预测的阻挡高度; 并且具有优异的电性能,同时它们能够以良好的平面度制造。
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公开(公告)号:US4141020A
公开(公告)日:1979-02-20
申请号:US755272
申请日:1976-12-29
IPC分类号: H01L29/43 , H01L21/28 , H01L21/285 , H01L29/47 , H01L29/872 , H01L29/48
CPC分类号: H01L29/47 , H01L21/28537
摘要: An aluminum-transition metal Schottky barrier contact, and methods of fabrication thereof are disclosed. In one preferred embodiment, the junction is comprised of an aluminum-tantalum intermetallic layer abutting a silicon substrate. Alternate embodiments utilize an intermetallic compound of a metal selected from the group of tantalum, zirconium, hafnium, niobium, titanium and nickel in combination with aluminum. The preferred embodiments can be fabricated by evaporation of a layer of a metal selected from the above mentioned group followed by evaporation of a layer of aluminum on a silicon substrate, after which an annealing step is utilized which creates the desired intermetallic compound in a layer abutting the silicon surface. Alternatively, the junction can be created by hot or cold sputtering of a preselected intermetallic compound of one of the metals with aluminum directly upon the silicon substrate, followed by deposition of a conductive layer such as aluminum. In the case of cold sputtering an annealing step is required to perfect the desired intermetallic compound structure; and in the case of hot sputtering an annealing step may be useful in perfecting the desired intermetallic structure, although it is not essential. The resulting devices are highly thermally stable with predictable barrier heights; and exhibit excellent electrical properties while they are capable of fabrication with good planarity.
摘要翻译: 公开了铝 - 过渡金属肖特基势垒接触及其制造方法。 在一个优选实施例中,接合部包括邻接硅衬底的铝 - 钽金属间化合物层。 替代实施例使用选自钽,锆,铪,铌,钛和镍的金属的金属间化合物与铝的组合。 优选的实施方案可以通过蒸发选自上述组的金属层,然后在硅衬底上蒸发一层铝制成,之后利用退火步骤,其形成邻接的层中所需的金属间化合物 硅表面。 或者,可以通过在硅衬底上直接将铝中一种金属的预选金属间化合物用铝直接溅射,然后沉积诸如铝的导电层来产生结。 在冷溅射的情况下,需要退火步骤来完善所需的金属间化合物结构; 并且在热溅射的情况下,退火步骤可用于完善所需的金属间结构,尽管不是必需的。 所得到的器件具有高度的热稳定性和可预测的阻挡高度; 并且具有优异的电性能,同时它们能够以良好的平面度制造。
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