公开(公告)号：US08980656B2

公开(公告)日：2015-03-17

申请号：US13503123

申请日：2010-10-14

Applicant: Xiuling Li ,  Nicholas X. Fang ,  Placid M. Ferreira ,  Winston Chern ,  Ik Su Chun ,  Keng Hao Hsu

Inventor： Xiuling Li ,  Nicholas X. Fang ,  Placid M. Ferreira ,  Winston Chern ,  Ik Su Chun ,  Keng Hao Hsu

IPC: H01L21/00 ,  H01L21/308 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06

CPC classification number: H01L21/3081 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3086 ,  H01L29/0676 ,  Y10S977/893

Abstract: A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.

Abstract translation: 用于形成高纵横比半导体纳米结构阵列的新方法需要将包含固体电解质的印模的表面定位成与设置在半导体衬底上的导电膜相对。 印模的表面包括与导电膜接触的凹凸图案，以便限定胶片印记界面。 在膜 - 印迹界面上产生金属离子通量，并且在导电膜中产生与凹凸特征图案互补的凹陷特征图案。 凹陷特征延伸穿过导电膜的整个厚度以暴露下面的半导体衬底并且在衬底上限定导电图案。 去除印模，并且从基板选择性地去除导电图案之下的材料。 在半导体衬底中形成具有至少约5:1的长宽比纵横比的特征。

公开(公告)号：US20130052762A1

公开(公告)日：2013-02-28

申请号：US13503123

申请日：2010-10-14

Applicant: Xiuling Li ,  Nicholas X. Fang ,  Placid M. Ferreira ,  Winston Chern ,  Ik Su Chun ,  Keng Hao Hsu

Inventor： Xiuling Li ,  Nicholas X. Fang ,  Placid M. Ferreira ,  Winston Chern ,  Ik Su Chun ,  Keng Hao Hsu

IPC: H01L21/20 ,  H01L33/04

CPC classification number: H01L21/3081 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3086 ,  H01L29/0676 ,  Y10S977/893

Abstract: A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.

Abstract translation: 形成高纵横比半导体纳米结构阵列的新方法需要将包含固体电解质的印模的表面定位成与设置在半导体衬底上的导电膜相对。 印模的表面包括与导电膜接触的凹凸图案，以便限定胶片印记界面。 在膜 - 印迹界面上产生金属离子通量，并且在导电膜中产生与凹凸特征图案互补的凹陷特征图案。 凹陷特征延伸穿过导电膜的整个厚度以暴露下面的半导体衬底并且在衬底上限定导电图案。 去除印模，并且从基板选择性地去除导电图案之下的材料。 在半导体衬底中形成具有至少约5:1的长宽比纵横比的特征。