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1.发明申请CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权当前对平面磁阻的正确读取头设计使用当前的约束结构接近空中轴承表面公开(公告)号：US20120075751A1
公开(公告)日：2012-03-29
申请号：US13314449
申请日：2011-12-08
IPC分类号： G11B5/11
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。
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2.发明授权Read sensors and methods of making same with back-edge milling and refilling 有权读取传感器和使用后边缘铣削和重新填充的方法公开(公告)号：US08136226B2
公开(公告)日：2012-03-20
申请号：US12122417
申请日：2008-05-16
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B5/398 , G11B2005/3996 , Y10T29/49043 , Y10T428/1121
摘要： Methods and apparatus provide a refill configuration adjacent a back-edge that defines a height of a magnetoresistive read sensor. Milling through layers of the sensor forms the back-edge and may be initially conducted at a first angle of incidence greater than a second angle of incidence. In combination, an insulating material and a polish resistant material, such as a non-magnetic metal, disposed on the insulating material fills a void created by the milling. The sensor further includes first and second magnetic shields with the layers of the sensor along with the polish resistant material and insulating material disposed between the first and second magnetic shields.
摘要翻译： 方法和装置提供了邻近限定磁阻读取传感器的高度的后缘的再填充配置。 通过传感器层的铣削形成后边缘并且可以最初以大于第二入射角的第一入射角进行。 结合在一起，设置在绝缘材料上的绝缘材料和耐抛光材料（例如非磁性金属）填充由铣削产生的空隙。 传感器还包括第一和第二磁屏蔽，其中传感器的层与防抛光材料以及设置在第一和第二磁屏蔽之间的绝缘材料一起。
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3.发明授权公开(公告)号：US07974047B2
公开(公告)日：2011-07-05
申请号：US12202675
申请日：2008-09-02
IPC分类号： G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。 第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。 第二导电引线与第二MR传感器接触。 注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。
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4.发明申请公开(公告)号：US20090168254A1
公开(公告)日：2009-07-02
申请号：US12006322
申请日：2007-12-31
申请人： Ying Hong , Wipul P. Jayasekara , Daniele Mauri , David J. Seagle
发明人： Ying Hong , Wipul P. Jayasekara , Daniele Mauri , David J. Seagle
IPC分类号： G11B5/33
CPC分类号： G11B5/3166 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3173 , G11B5/3906 , G11B5/3909
摘要： A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.
摘要翻译： 用于测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。 组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻，传感器层结构。 组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。 测试装置在不同于多个第一位置的第二位置处设置在基板上。 测试装置允许使用平面内隧道技术测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性。
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5.发明申请公开(公告)号：US20100053818A1
公开(公告)日：2010-03-04
申请号：US12202675
申请日：2008-09-02
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。 第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。 第二导电引线与第二MR传感器接触。 注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。
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6.发明申请CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权当前对平面磁阻的正确读取头设计使用当前的约束结构接近空中轴承表面公开(公告)号：US20100027167A1
公开(公告)日：2010-02-04
申请号：US12182701
申请日：2008-07-30
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。
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7.发明授权Magnetoresistive sensor having a high resistance soft magnetic layer between sensor stack and shield 失效传感器堆叠和屏蔽之间具有高电阻软磁层的磁阻传感器公开(公告)号：US06995957B2
公开(公告)日：2006-02-07
申请号：US10393336
申请日：2003-03-18
申请人： Wipul P. Jayasekara
发明人： Wipul P. Jayasekara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3103 , G11B5/3133 , G11B5/3146 , G11B5/3903 , G11B5/40
摘要： A magnetoresistive sensor has a high resistance soft magnetic layer disposed between the sensor stack and at least one magnetic shield. The presence of the high resistance soft magnetic layer allows a smaller magnetic read gap to be achieved which results in higher recording density. The susceptibility of the magnetoresistive sensor to defects and electrostatic damage is improved. A disk drive is provided having the novel magnetoresistive sensor.
摘要翻译： 磁阻传感器具有设置在传感器堆叠和至少一个磁屏蔽之间的高电阻软磁层。 高电阻软磁层的存在允许实现更小的磁读取间隙，这导致更高的记录密度。 磁阻传感器对缺陷和静电损伤的敏感性得到改善。 提供具有新型磁阻传感器的磁盘驱动器。
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公开(公告)号：US08284525B2
公开(公告)日：2012-10-09
申请号：US13314449
申请日：2011-12-08
IPC分类号： G11B5/31
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
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9.发明授权Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface 有权电流垂直于平面磁阻读头设计，使用靠近空气轴承表面的电流限制结构公开(公告)号：US08098463B2
公开(公告)日：2012-01-17
申请号：US12182701
申请日：2008-07-30
IPC分类号： G11B5/31
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3929 , G11B5/398
摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。
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公开(公告)号：US07375931B2
公开(公告)日：2008-05-20
申请号：US11240542
申请日：2005-09-30
IPC分类号： G11B5/33
CPC分类号： G11B5/40 , G11B5/11 , G11B5/3133
摘要： Recording heads having an ESD shunt trace and methods of fabricating the same are disclosed. A recording head of the invention includes a first shield, a second shield, an MR read element between the first shield and the second shield, and an ESD shunt trace. The ESD shunt trace is formed from MR layers and is connected to the MR read element and one or both of the first shield and the second shield. One or more of the MR layers forming the ESD shunt trace are processed to reduce the MR properties of the ESD shunt trace. Examples of processing the ESD shunt trace are ion milling, ion implantation, oxidizing, reactive ion etching, sputter etching, wet chemical etching, etc.
摘要翻译： 公开了具有ESD分流迹线的记录头及其制造方法。 本发明的记录头包括第一屏蔽，第二屏蔽，第一屏蔽和第二屏蔽之间的MR读取元件以及ESD分流迹线。 ESD分路迹线由MR层形成，并连接到MR读取元件以及第一屏蔽和第二屏蔽中的一个或两个。 处理形成ESD分流迹线的一个或多个MR层以降低ESD分流迹线的MR特性。 处理ESD分流迹线的示例是离子铣削，离子注入，氧化，反应离子蚀刻，溅射蚀刻，湿化学蚀刻等。
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